APT10M11JVRU2 Microsemi Power Products Group, APT10M11JVRU2 Datasheet
APT10M11JVRU2
Specifications of APT10M11JVRU2
APT10M11JVRU2MI
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APT10M11JVRU2 Summary of contents
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... AR E Single Pulse Avalanche Energy AS IF Maximum Average Forward Current RMS Forward Current (Square wave, 50% duty) RMS These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT10M11JVRU2 V = 100V DSS R = 11mΩ max @ Tj = 25°C DSon I = 142A @ Tc = 25°C D Application • ...
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... Reverse Recovery Time I Maximum Reverse Recovery Current RRM Q Reverse Recovery Charge rr t Reverse Recovery Time rr Q Reverse Recovery Charge rr I Maximum Reverse Recovery Current RRM APT10M11JVRU2 = 25°C unless otherwise specified j Test Conditions T = 25° 0V,V = 100V 125° 0V,V = 80V j ...
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... Storage Temperature Range J STG T Max Lead Temp for Soldering:0.063” from case for 10 sec L Torque Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) Wt Package Weight Typical Performance Curve MOSFET APT10M11JVRU2 Min MOSFET Diode 2500 -55 www.microsemi.com Typ Max Unit 0.28 °C/W 1.21 20 ...
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... APT10M11JVRU2 www.microsemi.com 4 – 7 ...
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... Typical Diode Performance Curve APT10M11JVRU2 www.microsemi.com 5 – 7 ...
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... APT10M11JVRU2 www.microsemi.com 6 – 7 ...
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... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT10M11JVRU2 W=4.1 (.161) W=4.3 (.169) H=4 ...