APT50M75JLLU3 Microsemi Power Products Group, APT50M75JLLU3 Datasheet

no-image

APT50M75JLLU3

Manufacturer Part Number
APT50M75JLLU3
Description
MOSFET N-CH 500V 51A SOT-227
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of APT50M75JLLU3

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
75 mOhm @ 25.5A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
51A
Vgs(th) (max) @ Id
5V @ 1mA
Gate Charge (qg) @ Vgs
123nC @ 10V
Input Capacitance (ciss) @ Vds
5590pF @ 25V
Power - Max
290W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
APT50M75JLLU3
Manufacturer:
Microsemi Power Products Group
Quantity:
135
Absolute maximum ratings
Symbol
IF
R
V
IF
V
E
E
I
I
P
DSon
I
DM
AR
RMS
DSS
ISOTOP
AR
AS
D
GS
A V
D
MOSFET Power Module
Drain - Source Breakdown Voltage
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Maximum Average Forward Current
RMS Forward Current (Square wave, 50% duty)
G
G
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
ISOTOP
S
®
Buck chopper
D
D
A
Parameter
A
S
www.microsemi.com
Duty cycle=0.5
Application
Features
Benefits
V
R
I
D
DSS
DSon
= 51A @ Tc = 25°C
AC and DC motor control
Switched Mode Power Supplies
Power MOS 7
ISOTOP
Very low stray inductance
High level of integration
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Very rugged
Low profile
RoHS Compliant
-
-
-
-
-
-
= 500V
= 75mΩ max @ Tj = 25°C
Low R
Low input and Miller capacitance
Low gate charge
Fast intrinsic reverse diode
Avalanche energy rated
Very rugged
T
T
T
Tc = 80°C
c
c
c
APT50M75JLLU3
= 25°C
= 80°C
= 25°C
®
Package (SOT-227)
DSon
®
MOSFETs
Max ratings
2500
±30
500
204
290
51
39
75
51
50
30
39
Unit
mΩ
mJ
W
V
A
V
A
A
1 – 8

Related parts for APT50M75JLLU3

APT50M75JLLU3 Summary of contents

Page 1

... AR E Single Pulse Avalanche Energy AS IF Maximum Average Forward Current RMS Forward Current (Square wave, 50% duty) RMS These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT50M75JLLU3 V = 500V DSS R = 75mΩ max @ Tj = 25°C DSon I = 51A @ Tc = 25°C D Application • ...

Page 2

... T Rise Time r T Turn-off Delay Time d(off) T Fall Time f Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy APT50M75JLLU3 = 25°C unless otherwise specified j Test Conditions T = 25° 0V,V = 500V 125° 0V,V = 400V j ...

Page 3

... T ,T Storage Temperature Range J STG T Max Lead Temp for Soldering:0.063” from case for 10 sec L Torque Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) Wt Package Weight Typical Performance Curve MOSFET APT50M75JLLU3 Test Conditions Min I = 30A 60A 30A T = 125° ...

Page 4

... APT50M75JLLU3 www.microsemi.com 4 – 8 ...

Page 5

... APT50M75JLLU3 www.microsemi.com 5 – 8 ...

Page 6

... Typical Diode Performance Curve APT50M75JLLU3 www.microsemi.com 6 – 8 ...

Page 7

... APT50M75JLLU3 www.microsemi.com 7 – 8 ...

Page 8

... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT50M75JLLU3 W=4.1 (.161) W=4.3 (.169) H=4 ...

Related keywords