APT100M50J Microsemi Power Products Group, APT100M50J Datasheet
APT100M50J
Manufacturer Part Number
APT100M50J
Description
MOSFET N-CH 500V 100A SOT-227
Manufacturer
Microsemi Power Products Group
Datasheet
1.APT100M50J.pdf
(4 pages)
Specifications of APT100M50J
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
38 mOhm @ 75A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
100A
Vgs(th) (max) @ Id
5V @ 5mA
Gate Charge (qg) @ Vgs
620nC @ 10V
Input Capacitance (ciss) @ Vds
24600pF @ 25V
Power - Max
960W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
APT100M50JMI
APT100M50JMI
APT100M50JMI
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
APT100M50J
Manufacturer:
POWEREX
Quantity:
1 000
Part Number:
APT100M50J
Quantity:
152
Absolute Maximum Ratings
Thermal and Mechanical Characteristics
Symbol
Symbol
V
T
Torque
Power MOS 8
A proprietary planar stripe design yields excellent reliability and manufacturability. Low
switching loss is achieved with low input capacitance and ultra low C
tance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
help control slew rates during switching, resulting in low EMI and reliable paralleling,
even when switching at very high frequency. Reliability in flyback, boost, forward, and
other circuits is enhanced by the high avalanche energy capability.
FEATURES
J
Isolation
R
R
V
E
I
,T
W
I
• Fast switching with low EMI/RFI
• Low R
• Ultra low C
• Low gate charge
• Avalanche energy rated
• RoHS compliant
P
DM
I
AR
θ CS
θ JC
GS
D
AS
D
STG
T
DS(on)
Parameter
Continuous Drain Current @ T
Continuous Drain Current @ T
Pulsed Drain Current
Gate-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current, Repetitive or Non-Repetitive
Characteristic
Total Power Dissipation @ T
Junction to Case Thermal Resistance
Case to Sink Thermal Resistance, Flat, Greased Surface
Operating and Storage Junction Temperature Range
RMS Voltage
Package Weight
Terminals and Mounting Screws.
™
rss
is a high speed, high voltage N-channel switch-mode power MOSFET.
for improved noise immunity
(50-60hHz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.)
N-Channel MOSFET
1
C
C
C
= 25°C
Microsemi Website - http://www.microsemi.com
2
= 25°C
= 100°C
TYPICAL APPLICATIONS
• PFC and other boost converter
• Buck converter
• Two switch forward (asymmetrical bridge)
• Single switch forward
• Flyback
• Inverters
rss
"Miller" capaci-
2500
Min
-55
Single die MOSFET
500V, 100A, 0.038Ω Max
ISOTOP
Ratings
APT100M50J
APT100M50J
Typ
0.15
1.03
29.2
3350
±30
100
490
64
75
®
Max
0.13
960
150
1.1
10
"UL Recognized"
file # E145592
G
°C/W
in·lbf
Unit
Unit
N·m
mJ
°C
W
oz
A
V
A
V
g
D
S
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APT100M50J Summary of contents
Page 1
... Single switch forward • Flyback • Inverters = 25° 100° 25°C C Microsemi Website - http://www.microsemi.com APT100M50J 500V, 100A, 0.038Ω Max "UL Recognized" file # E145592 ISOTOP ® D APT100M50J Single die MOSFET G S Ratings Unit 100 64 A 490 ±30 V 3350 Min Typ ...
Page 2
Symbol Parameter V Drain-Source Breakdown Voltage BR(DSS) ∆V /∆T Breakdown Voltage Temperature Coefficient BR(DSS Drain-Source On Resistance DS(on) V Gate-Source Threshold Voltage GS(th) ∆V /∆T Threshold Voltage Temperature Coefficient GS(th Zero Gate Voltage Drain Current DSS ...
Page 3
V = 10V -55° 25° 125°C J NORMALIZED 10V @ 75A GS = 7,8 & 10V > MAX. DS D(ON) DS(ON) ...
Page 4
I DM 13µs 100µs R ds(on) 1ms 10ms 100ms DC line Dissipated Power (Watts 0.9 0.7 0.5 0.3 0.1 0. 4.0 (.157) (2 places) ® ISOTOP is a registered trademark of ST Microelectronics NV. Microsemi's products ...