APT58M80J Microsemi Power Products Group, APT58M80J Datasheet
APT58M80J
Manufacturer Part Number
APT58M80J
Description
MOSFET N-CH 800V 58A SOT-227
Manufacturer
Microsemi Power Products Group
Datasheet
1.APT58M80J.pdf
(4 pages)
Specifications of APT58M80J
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
110 mOhm @ 43A, 10V
Drain To Source Voltage (vdss)
800V
Current - Continuous Drain (id) @ 25° C
58A
Vgs(th) (max) @ Id
5V @ 5mA
Gate Charge (qg) @ Vgs
570nC @ 10V
Input Capacitance (ciss) @ Vds
17550pF @ 25V
Power - Max
960W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
APT58M80JMI
APT58M80JMI
APT58M80JMI
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
APT58M80J
Manufacturer:
Microsemi Power Products Group
Quantity:
135
Company:
Part Number:
APT58M80J
Manufacturer:
MITSUBISHI
Quantity:
1 000
Part Number:
APT58M80J
Quantity:
135
Absolute Maximum Ratings
Thermal and Mechanical Characteristics
Symbol
Symbol
V
T
Torque
Power MOS 8
A proprietary planar stripe design yields excellent reliability and manufacturability. Low
switching loss is achieved with low input capacitance and ultra low C
tance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
help control slew rates during switching, resulting in low EMI and reliable paralleling,
even when switching at very high frequency. Reliability in flyback, boost, forward, and
other circuits is enhanced by the high avalanche energy capability.
FEATURES
J
Isolation
R
R
V
E
I
,T
W
I
• Fast switching with low EMI/RFI
• Low R
• Ultra low C
• Low gate charge
• Avalanche energy rated
• RoHS compliant
P
DM
I
AR
θ CS
θ JC
GS
D
AS
D
STG
T
DS(on)
Parameter
Continuous Drain Current @ T
Continuous Drain Current @ T
Pulsed Drain Current
Gate-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current, Repetitive or Non-Repetitive
Characteristic
Total Power Dissipation @ T
Junction to Case Thermal Resistance
Case to Sink Thermal Resistance, Flat, Greased Surface
Operating and Storage Junction Temperature Range
RMS Voltage
Package Weight
Terminals and Mounting Screws.
™
rss
is a high speed, high voltage N-channel switch-mode power MOSFET.
for improved noise immunity
(50-60hHz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.)
N-Channel MOSFET
1
C
C
C
= 25°C
Microsemi Website - http://www.microsemi.com
2
= 25°C
= 100°C
TYPICAL APPLICATIONS
• PFC and other boost converter
• Buck converter
• Two switch forward (asymmetrical bridge)
• Single switch forward
• Flyback
• Inverters
rss
"Miller" capaci-
2500
Min
-55
Single die MOSFET
ISOTOP
Ratings
800V, 58A, 0.11Ω Max
APT58M80J
Typ
0.15
1.03
29.2
3725
±30
325
58
36
43
APT58M80J
®
Max
0.13
960
150
1.1
10
"UL Recognized"
file # E145592
G
°C/W
in·lbf
Unit
Unit
N·m
mJ
°C
W
oz
A
V
A
V
g
D
S
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APT58M80J Summary of contents
Page 1
... Single switch forward • Flyback • Inverters = 25° 100° 25°C C Microsemi Website - http://www.microsemi.com APT58M80J 800V, 58A, 0.11Ω Max "UL Recognized" file # E145592 ISOTOP ® D APT58M80J Single die MOSFET G S Ratings Unit 325 ±30 V 3725 Min Typ Max ...
Page 2
Symbol Parameter V Drain-Source Breakdown Voltage BR(DSS) ∆V /∆T Breakdown Voltage Temperature Coefficient BR(DSS Drain-Source On Resistance DS(on) V Gate-Source Threshold Voltage GS(th) ∆V /∆T Threshold Voltage Temperature Coefficient GS(th Zero Gate Voltage Drain Current DSS ...
Page 3
V = 10V -55° 25° 125°C J NORMALIZED 10V @ 43A GS = 10, & 15V 4.5V V > MAX. DS D(ON) ...
Page 4
I DM 13µs 100µs 1ms R ds(on) 10ms 100ms DC line Dissipated Power (Watts 0.9 0.7 0.5 0.3 0.1 0. 4.0 (.157) (2 places) ® ISOTOP is a registered trademark of ST Microelectronics NV. Microsemi's products ...