APTM20DAM05G Microsemi Power Products Group, APTM20DAM05G Datasheet

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APTM20DAM05G

Manufacturer Part Number
APTM20DAM05G
Description
MOSFET MOD BOOST CHOP 200V SP6
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of APTM20DAM05G

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
6 mOhm @ 158.5A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
317A
Vgs(th) (max) @ Id
5V @ 10mA
Gate Charge (qg) @ Vgs
448nC @ 10V
Input Capacitance (ciss) @ Vds
27400pF @ 25V
Power - Max
1136W
Mounting Type
Chassis Mount
Package / Case
SP6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Absolute maximum ratings
Symbol
R
V
MOSFET Power Module
V
E
E
I
I
P
DSon
I
DM
AR
DSS
AR
AS
D
GS
D
S2
G2
Drain - Source Breakdown Voltage
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Boost chopper
VBUS
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
G2
S2
0/VBUS
CR1
Q2
Parameter
VBUS
0/VBUS
OUT
OUT
www.microsemi.com
Application
Features
Benefits
T
T
T
V
R
I
c
c
c
D
= 25°C
= 80°C
= 25°C
DSS
DSon
= 317A @ Tc = 25°C
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction
Power MOS 7
Kelvin source for easy drive
Very low stray inductance
High level of integration
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Low profile
RoHS Compliant
-
-
-
-
-
-
-
= 200V
Low R
Low input and Miller capacitance
Low gate charge
Avalanche energy rated
Very rugged
Symmetrical design
M5 power connectors
= 5mΩ typ @ Tj = 25°C
APTM20DAM05G
Max ratings
DSon
1268
1136
2500
200
317
237
±30
89
50
®
6
MOSFETs
Unit
mΩ
mJ
W
V
A
V
A
1 – 6

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APTM20DAM05G Summary of contents

Page 1

... Avalanche current (repetitive and non repetitive Repetitive Avalanche Energy AR E Single Pulse Avalanche Energy AS These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTM20DAM05G V = 200V DSS R = 5mΩ typ @ Tj = 25°C DSon I = 317A @ Tc = 25°C D Application • ...

Page 2

... Symbol Characteristic V Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current RM I DCForward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr APTM20DAM05G = 25°C unless otherwise specified j Test Conditions V = 0V,V = 200V T = 25° 0V,V = 160V 125° ...

Page 3

... T Storage Temperature Range STG T Operating Case Temperature C Torque Mounting torque Wt Package Weight SP6 Package outline (dimensions in mm) See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com APTM20DAM05G Transistor Diode To heatsink M6 For terminals M5 www.microsemi.com Min Typ Max Unit 0.11 °C/W ...

Page 4

... Drain Current DS 1.2 Normalized to 1.15 V =10V @ 158.5A GS 1.1 1.05 1 0.95 0.9 0 100 200 I , Drain Current (A) D APTM20DAM05G Single Pulse 0.001 0.01 rectangular Pulse Duration (Seconds) 800 V 9V 250µs pulse test @ < 0.5 duty cycle 600 7.5V 400 7V 6.5V 200 6V 5. ...

Page 5

... T , Case Temperature (°C) C Capacitance vs Drain to Source Voltage 100000 Coss 10000 1000 Crss 100 Drain to Source Voltage (V) DS www.microsemi.com APTM20DAM05G ON resistance vs Temperature 2.5 V =10V 158.5A D 2.0 1.5 1.0 0.5 0.0 -50 - Junction Temperature (°C) J Maximum Safe Operating Area 10000 ...

Page 6

... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTM20DAM05G 160 V ...

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