APTM120H29FG Microsemi Power Products Group, APTM120H29FG Datasheet
APTM120H29FG
Specifications of APTM120H29FG
APTM120H29FGMI
Related parts for APTM120H29FG
APTM120H29FG Summary of contents
Page 1
... Avalanche current (repetitive and non repetitive Repetitive Avalanche Energy AR E Single Pulse Avalanche Energy AS These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTM120H29FG V = 1200V DSS R = 290mΩ typ @ Tj = 25°C DSon I = 34A @ Tc = 25°C D Application • ...
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... 34A 125° 600V 25°C di /dt = 200A/µ 125°C j ≤ V ≤ 150° DSS j www.microsemi.com APTM120H29FG Min Typ Max Unit 350 = 25°C µA 1500 = 125°C 290 348 mΩ ±150 nA Min Typ Max Unit 10.3 nF 1.54 0.26 374 ...
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... J T Storage Temperature Range STG T Operating Case Temperature C Torque Mounting torque Wt Package Weight SP6 Package outline (dimensions in mm) See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com APTM120H29FG To heatsink M6 For terminals M5 www.microsemi.com Min Typ Max Unit 0.16 °C/W 2500 V ...
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... Pulse Duration (Seconds) 160 V DS 140 250µs pulse test @ < 0.5 duty cycle 7V 120 6.5V 100 5. Drain Current vs Case Temperature 40 30 =10V 20 V =20V www.microsemi.com APTM120H29FG 1 10 Transfert Characteristics > I (on)xR (on)MAX =25° =125°C T =-55° Gate to Source Voltage ( 100 125 150 T , Case Temperature (° ...
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... T , Case Temperature (°C) C Capacitance vs Drain to Source Voltage 100000 Ciss 10000 Coss 1000 Crss 100 Drain to Source Voltage (V) DS www.microsemi.com APTM120H29FG ON resistance vs Temperature 2.5 V =10V GS I =17A D 2.0 1.5 1.0 0.5 0.0 -50 - Junction Temperature (°C) J Maximum Safe Operating Area ...
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... J 5 L=100µH E off 0.0 2.5 Source to Drain Diode Forward Voltage 1000 100 ZVS 10 1 0.2 0.4 0.6 0 www.microsemi.com APTM120H29FG Rise and Fall times vs Current =800V Drain Current (A) D =800V E off off 5.0 7.5 10.0 12.5 15.0 17.5 Gate Resistance (Ohms) T =150° ...