APTM100A13SCG Microsemi Power Products Group, APTM100A13SCG Datasheet

PWR MODULE MOSFET 1000V 65A SP6

APTM100A13SCG

Manufacturer Part Number
APTM100A13SCG
Description
PWR MODULE MOSFET 1000V 65A SP6
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of APTM100A13SCG

Fet Type
2 N-Channel (Half Bridge)
Fet Feature
Standard
Rds On (max) @ Id, Vgs
156 mOhm @ 32.5A, 10V
Drain To Source Voltage (vdss)
1000V (1kV)
Current - Continuous Drain (id) @ 25° C
65A
Vgs(th) (max) @ Id
5V @ 6mA
Gate Charge (qg) @ Vgs
562nC @ 10V
Input Capacitance (ciss) @ Vds
15200pF @ 25V
Power - Max
1250W
Mounting Type
Chassis Mount
Package / Case
SP6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
APTM100A13SCGMI
APTM100A13SCGMI
Absolute maximum ratings
Symbol
R
V
Series & SiC parallel diodes
MOSFET Power Module
V
E
E
I
I
P
DSon
I
DM
AR
DSS
AR
AS
D
GS
D
G1
S1
S2
G2
Drain - Source Breakdown Voltage
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
VBUS
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
G1
S1
G2
S2
Phase leg
0/VBUS
Q1
Q2
Parameter
0/VBUS
OUT
VBUS
OUT
www.microsemi.com
Application
Features
Benefits
V
R
I
T
T
T
D
c
c
c
DSS
DSon
= 25°C
= 80°C
= 25°C
= 65A @ Tc = 25°C
Motor control
Switched Mode Power Supplies
Uninterruptible Power Supplies
Power MOS 7
Parallel SiC Schottky Diode
Kelvin source for easy drive
Very low stray inductance
High level of integration
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Low profile
RoHS Compliant
-
-
-
-
-
-
-
-
-
-
-
= 1000V
= 130mΩ typ @ Tj = 25°C
Low R
Low input and Miller capacitance
Low gate charge
Avalanche energy rated
Very rugged
Zero reverse recovery
Zero forward recovery
Temperature Independent switching behavior
Positive temperature coefficient on VF
Symmetrical design
M5 power connectors
APTM100A13SCG
Max ratings
DSon
1000
1250
1300
240
±30
156
65
49
24
30
®
MOSFETs
Unit
mΩ
mJ
W
V
A
V
A
1 – 7

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APTM100A13SCG Summary of contents

Page 1

... Avalanche current (repetitive and non repetitive Repetitive Avalanche Energy AR E Single Pulse Avalanche Energy AS These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTM100A13SCG V = 1000V DSS R = 130mΩ typ @ Tj = 25°C DSon I = 65A @ Tc = 25°C D Application • ...

Page 2

... Symbol Characteristic V Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr APTM100A13SCG = 25°C unless otherwise specified j Test Conditions V = 0V,V = 1000V T = 25° 0V,V = 800V T = 125° ...

Page 3

... J T Storage Temperature Range STG T Operating Case Temperature C Torque Mounting torque Wt Package Weight SP6 Package outline (dimensions in mm) See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com APTM100A13SCG Test Conditions Min 1200 T = 25° =1200V 125° 125° 25° ...

Page 4

... Drain Current DS(on) 1.4 Normalized to V =10V @ 32.5A 1 1.2 1.1 1 0.9 0 Drain Current (A) D APTM100A13SCG Single Pulse 0.001 0.01 rectangular Pulse Duration (Seconds) 360 V 7V 300 250µs pulse test @ < 0.5 duty cycle 6.5V 240 6V 180 120 5. Drain Current vs Case Temperature ...

Page 5

... T , Case Temperature (°C) C Capacitance vs Drain to Source Voltage 100000 Ciss 10000 Coss 1000 Crss 100 Drain to Source Voltage (V) DS www.microsemi.com APTM100A13SCG ON resistance vs Temperature 2.5 V =10V GS I =32.5A D 2.0 1.5 1.0 0.5 0.0 -50 - Junction Temperature (°C) J Maximum Safe Operating Area ...

Page 6

... DS ZCS D=50% 400 R =0.5Ω =125°C J 300 T =75°C C Hars switching 200 ZVS 100 Drain Current (A) D www.microsemi.com APTM100A13SCG Rise and Fall times vs Current =667V DS R =0.5Ω =125°C J L=100µ Drain Current (A) D Switching Energy vs Gate Resistance ...

Page 7

... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTM100A13SCG Single Pulse 0.001 ...

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