IXFN80N50P IXYS, IXFN80N50P Datasheet
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Manufacturer Part Number
IXFN80N50P
Description
MOSFET N-CH 500V 66A SOT-227
Specifications of IXFN80N50P
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
65 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
66A
Vgs(th) (max) @ Id
5V @ 8mA
Gate Charge (qg) @ Vgs
195nC @ 10V
Input Capacitance (ciss) @ Vds
12700pF @ 25V
Power - Max
700W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Configuration
Single Dual Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.065 Ohms
Forward Transconductance Gfs (max / Min)
70 s
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
66 A
Power Dissipation
700 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
66
Rds(on), Max, Tj=25°c, (?)
0.065
Ciss, Typ, (pf)
12700
Qg, Typ, (nc)
195
Trr, Typ, (ns)
-
Trr, Max, (ns)
200
Pd, (w)
700
Rthjc, Max, (ºc/w)
0.18
Package Style
SOT-227B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
PolarHV
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
V
M
Weight
Symbol
(T
BV
V
I
I
R
© 2006 IXYS All rights reserved
D25
DM
AR
GSS
DSS
J
JM
stg
L
DSS
DGR
GS
GSM
AR
AS
D
ISOL
GS(th)
DS(on)
d
J
DSS
= 25° C unless otherwise specified)
Test Conditions
T
T
Transient
Continuous
T
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
50/60 Hz; I
Mounting torque
Terminal connection torque (M4)
Test Conditions
V
V
V
V
V
S
V
J
J
C
C
C
C
C
J
C
GS
DS
GS
DS
GS
GS
= 25° C to 150° C
= 25° C to 150° C; R
= 25° C
= 25° C, pulse width limited by T
= 25° C
= 25° C
= 25° C
≤ I
≤ 150° C, R
= 25° C
TM
= 0 V, I
= V
= ± 30 V
= V
= 0 V
= 10 V, I
DM
, di/dt ≤ 100 A/µs, V
GS
DSS
HiPerFET
, I
ISOL
D
D
DC
D
= 500 µA
= 8 mA
G
= 0.5 I
, V
≤
= 2 Ω
1
DS
= 0
D25
mA
, Note 1
GS
= 1 MΩ
DD
T
J
≤ V
= 125° C
DSS
JM
IXFN 80N50P
,
500
Min.
3.0
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
Typ.
1.5/13 Nm/ib.in.
1.5/13 Nm/ib.in.
2500
± 40
± 30
300
500
500
200
700
150
3.0
66
80
80
10
30
± 200
Max.
5.0
25
65
1
V/ns
mA
mJ
mΩ
V~
nA
µA
°C
°C
°C
°C
W
V
V
V
V
A
A
A
V
V
g
J
miniBLOC, SOT-227 B (IXFN)
Either source tab S can be used forsource
current or Kelvin gate return.
Features
l
l
l
l
l
Advantages
l
l
l
Fast intrinsic diode
International standard package
Unclamped Inductive Switching (UIS)
rated
UL recognized.
Isolated mounting base
Easy to mount
Space savings
High power density
V
I
R
t
D25
rr
DS(on)
DSS
G = Gate
S = Source
E153432
G
S
=
≤ ≤ ≤ ≤ ≤
≤ ≤ ≤ ≤ ≤
= 500
D
D = Drain
200 ns
DS99477E(01/06)
66 A
65 mΩ Ω Ω Ω Ω
S
V
Related parts for IXFN80N50P
IXFN80N50P Summary of contents
... GS(th ± GSS DSS DS DSS 0.5 I DS(on D25 © 2006 IXYS All rights reserved IXFN 80N50P Maximum Ratings 500 = 1 MΩ 500 GS ± 40 ± 200 3.0 ≤ DSS 700 -55 ... +150 150 -55 ... +150 300 2500 1.5/13 Nm/ib.in. 1.5/13 Nm/ib.in. 30 Characteristic Values Min. ...
... Note 1: Pulse test, t ≤ 300 µs, duty cycle d ≤ IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or more of the following U.S. patents: 4,850,072 4,881,106 Characteristic Values (T = 25° C unless otherwise specified) J Min ...
... V olts D S Fig Norm alize DS(on) V alue vs . Drain Curr 10V GS 2.8 2.6 2.4 2.2 2 1.8 1.6 1.4 1 mperes D © 2006 IXYS All rights reserved ° C 180 10V 160 8V 140 7V 120 100 ° C 3.4 3.1 7V 2.8 2.5 6V 2.2 1.9 1 ...
... T = 125 0.4 0.6 0 Volts S D Fig. 11. Capacitance 100000 f = 1MHz 10000 1000 100 Volts D S IXYS reserves the right to change limits, test conditions, and dimensions. 140 120 100 6 ° 1.2 1.4 1.6 1000 C iss 100 C oss 10 C rss ...
... IXYS All rights reserved Fig. 13. Maxim um Transient Therm al Resistance 0.001 0.01 Pulse Width - Seconds IXFN 80N50P 0 ...
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