IXFN80N50P IXYS, IXFN80N50P Datasheet - Page 2

• Manufacturer Part Number: IXFN80N50P
• Description: MOSFET N-CH 500V 66A SOT-227
• Manufacturer: IXYS
• Series: PolarHV™r

Specifications of IXFN80N50P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 65 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 66A
• Vgs(th) (max) @ Id: 5V @ 8mA
• Gate Charge (qg) @ Vgs: 195nC @ 10V
• Input Capacitance (ciss) @ Vds: 12700pF @ 25V
• Power - Max: 700W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Configuration: Single Dual Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.065 Ohms
• Forward Transconductance Gfs (max / Min): 70 s
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 66 A
• Power Dissipation: 700 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 66
• Rds(on), Max, Tj=25°c, (?): 0.065
• Ciss, Typ, (pf): 12700
• Qg, Typ, (nc): 195
• Trr, Typ, (ns): -
• Trr, Max, (ns): 200
• Pd, (w): 700
• Rthjc, Max, (ºc/w): 0.18
• Package Style: SOT-227B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
I
I
V
t
Q
I
Note 1:
S
SM
RM
d(on)
r
d(off)
f
rr
IXYS MOSFETs and IGBTs are covered by 4,835,592
IXYS reserves the right to change limits, test conditions, and dimensions.
fs
SD
iss
oss
rss
thJC
thCK
g(on)
gs
gd
RM
one or more of the following U.S. patents:
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
Test Conditions
V
V
V
R
V
Test Conditions
V
Repetitive
I
I
F
F
V
DS
GS
GS
GS
GS
G
= I
= 25 A, -di/dt = 100 A/µs
R
= 20 V; I
= 2 Ω (External)
= 10 V, V
= 100 V, V
= 0 V, V
= 10 V, V
= 0 V
S
, V
GS
= 0 V, Note 1
D
DS
DS
= 0.5 I
DS
GS
= 25 V, f = 1 MHz
= 0.5 V
= 0.5 V
4,850,072
4,881,106
= 0 V
D25
, Note 1
DSS
DSS
, I
4,931,844
5,017,508
5,034,796
, I
D
D
= 0.5 I
= 0.5*I
(T
T
J
J
= 25° C unless otherwise specified)
= 25° C unless otherwise specified)
5,049,961
5,063,307
5,187,117
D25
D25
Min.
Min.
5,237,481
5,381,025
5,486,715
Characteristic Values
Characteristic Values
35
1280
Typ.
Typ.
12.7
0.05
120
195
0.8
70
25
27
70
18
70
64
6,162,665
6,259,123 B1
6,306,728 B1
8
Max.
Max.
0.18° C/W
200
200
1.5
80
° C/W
6,404,065 B1
6,534,343
6,583,505
nC
nC
nC
µC
nF
pF
pF
ns
ns
ns
ns
ns
S
A
A
V
A
miniBLOC, SOT-227B (IXFN) Outline
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6771478 B2
IXFN 80N50P