IXFN80N50P IXYS, IXFN80N50P Datasheet - Page 2
![MOSFET N-CH 500V 66A SOT-227](/photos/14/30/143066/ixfn80n50p_sml.jpg)
IXFN80N50P
Manufacturer Part Number
IXFN80N50P
Description
MOSFET N-CH 500V 66A SOT-227
Manufacturer
IXYS
Series
PolarHV™r
Datasheet
1.IXFN80N50P.pdf
(5 pages)
Specifications of IXFN80N50P
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
65 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
66A
Vgs(th) (max) @ Id
5V @ 8mA
Gate Charge (qg) @ Vgs
195nC @ 10V
Input Capacitance (ciss) @ Vds
12700pF @ 25V
Power - Max
700W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Configuration
Single Dual Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.065 Ohms
Forward Transconductance Gfs (max / Min)
70 s
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
66 A
Power Dissipation
700 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
66
Rds(on), Max, Tj=25°c, (?)
0.065
Ciss, Typ, (pf)
12700
Qg, Typ, (nc)
195
Trr, Typ, (ns)
-
Trr, Max, (ns)
200
Pd, (w)
700
Rthjc, Max, (ºc/w)
0.18
Package Style
SOT-227B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFN80N50P
Manufacturer:
ARTESYN
Quantity:
1 000
Part Number:
IXFN80N50P
Quantity:
122
Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
I
I
V
t
Q
I
Note 1:
S
SM
RM
d(on)
r
d(off)
f
rr
IXYS MOSFETs and IGBTs are covered by 4,835,592
IXYS reserves the right to change limits, test conditions, and dimensions.
fs
SD
iss
oss
rss
thJC
thCK
g(on)
gs
gd
RM
one or more of the following U.S. patents:
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
Test Conditions
V
V
V
R
V
Test Conditions
V
Repetitive
I
I
F
F
V
DS
GS
GS
GS
GS
G
= I
= 25 A, -di/dt = 100 A/µs
R
= 20 V; I
= 2 Ω (External)
= 10 V, V
= 100 V, V
= 0 V, V
= 10 V, V
= 0 V
S
, V
GS
= 0 V, Note 1
D
DS
DS
= 0.5 I
DS
GS
= 25 V, f = 1 MHz
= 0.5 V
= 0.5 V
4,850,072
4,881,106
= 0 V
D25
, Note 1
DSS
DSS
, I
4,931,844
5,017,508
5,034,796
, I
D
D
= 0.5 I
= 0.5*I
(T
T
J
J
= 25° C unless otherwise specified)
= 25° C unless otherwise specified)
5,049,961
5,063,307
5,187,117
D25
D25
Min.
Min.
5,237,481
5,381,025
5,486,715
Characteristic Values
Characteristic Values
35
1280
Typ.
Typ.
12.7
0.05
120
195
0.8
70
25
27
70
18
70
64
6,162,665
6,259,123 B1
6,306,728 B1
8
Max.
Max.
0.18° C/W
200
200
1.5
80
° C/W
6,404,065 B1
6,534,343
6,583,505
nC
nC
nC
µC
nF
pF
pF
ns
ns
ns
ns
ns
S
A
A
V
A
miniBLOC, SOT-227B (IXFN) Outline
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6771478 B2
IXFN 80N50P