IXFN80N50P IXYS, IXFN80N50P Datasheet - Page 3

• Manufacturer Part Number: IXFN80N50P
• Description: MOSFET N-CH 500V 66A SOT-227
• Manufacturer: IXYS
• Series: PolarHV™r

Specifications of IXFN80N50P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 65 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 66A
• Vgs(th) (max) @ Id: 5V @ 8mA
• Gate Charge (qg) @ Vgs: 195nC @ 10V
• Input Capacitance (ciss) @ Vds: 12700pF @ 25V
• Power - Max: 700W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Configuration: Single Dual Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.065 Ohms
• Forward Transconductance Gfs (max / Min): 70 s
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 66 A
• Power Dissipation: 700 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 66
• Rds(on), Max, Tj=25°c, (?): 0.065
• Ciss, Typ, (pf): 12700
• Qg, Typ, (nc): 195
• Trr, Typ, (ns): -
• Trr, Max, (ns): 200
• Pd, (w): 700
• Rthjc, Max, (ºc/w): 0.18
• Package Style: SOT-227B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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3.2
2.8
2.6
2.4
2.2
1.8
1.6
1.4
1.2
0.8
80
70
60
50
40
30
20
10
80
70
60
50
40
30
20
10
0
0
3
2
1
0
0
0
Fig. 5. R
V
20
GS
Fig. 3. Output Characte r is tics
2
Fig. 1. Output Characte r is tics
1
= 10V
V alue vs . Drain Curr e nt
40
DS(on)
4
60
2
V
I
Norm alize d to I
D S
V
D
@ 125
V
D S
@ 25
- A mperes
6
80
V
GS
- V olts
GS =
- V olts
3
= 10V
100
°
°
10V
8V
7V
C
C
8
120
4
T
10
7V
6V
5V
J
T
6V
5V
J
= 125
D
= 25
140
=
5
40A
°
°
12
C
C
160
180
14
6
180
160
140
120
100
3.4
3.1
2.8
2.5
2.2
1.9
1.6
1.3
0.7
0.4
80
60
40
20
70
60
50
40
30
20
10
0
1
0
-50
-50
Fig. 2. Exte nde d Output Char acte ris tics
0
Fig. 4. R
V alue vs . Junction Te m pe rature
V
-25
-25
3
GS
Fig. 6. Dr ain Cur r e nt vs . Cas e
= 10V
V
6
GS
DS(on
T
0
0
T
C
J
= 10V
- Degrees Centigrade
- Degrees Centigrade
9
8V
T e m p e r atur e
)
25
25
Norm alize d to I
@ 25
V
I
D
D S
1 2
= 80A
50
50
7V
6V
5V
- V olts
°
C
1 5
IXFN 80N50P
75
75
I
D
1 8
= 40A
100
100
D
21
=
40A
125
125
24
150
150
27