IXTN32P60P IXYS, IXTN32P60P Datasheet

MOSFET P-CH 600V 32A SOT227

IXTN32P60P

Manufacturer Part Number
IXTN32P60P
Description
MOSFET P-CH 600V 32A SOT227
Manufacturer
IXYS
Series
PolarP™r
Datasheet

Specifications of IXTN32P60P

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
350 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
32A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
196nC @ 10V
Input Capacitance (ciss) @ Vds
11100pF @ 25V
Power - Max
890W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Vdss, Max, (v)
-600
Id(cont), Tc=25°c, (a)
-32
Rds(on), Max, Tj=25°c, (?)
0.350
Ciss, Typ, (pf)
11100
Qg, Typ, (nc)
196
Trr, Typ, (ns)
480
Pd, (w)
890
Rthjc, Max, (k/w)
0.14
Package Style
SOT-227
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXTN32P60P
Manufacturer:
IXYS
Quantity:
469
PolarP
Power MOSFET
P-Channel Enhancement Mode
Avalanche Rated
Symbol
V
V
V
V
I
I
I
E
dV/dt
P
T
T
T
T
T
V
M
Weight
Symbol
(T
BV
V
I
I
R
© 2008 IXYS CORPORATION, All rights reserved
D25
DM
AR
GSS
DSS
J
JM
stg
L
SOLD
DSS
DGR
GSS
GSM
AR
D
ISOL
GS(th)
DS(on)
d
J
DSS
= 25°C, unless otherwise specified)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
1.6mm (0.062 in.) from case for 10s
Plastic body for 10s
50/60 Hz, RMS
I
Mounting torque
Terminal Connection torque
V
V
V
V
V
V
Test Conditions
S
ISOL
TM
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
GS
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
≤ I
= 25°C
≤ 1mA
= 0V, I
= V
= ±20V, V
= V
= 0V
= -10V, I
DM
GS
, V
DSS
, I
DD
D
D
= - 250μA
D
≤ V
= - 250μA
DS
= 0.5 • I
DSS
= 0V
, T
t = 1 minute
t = 1 second
J
D25
GS
≤ 150°C
, Note 1
= 1MΩ
Preliminary Technical Information
T
J
= 125°C
JM
IXTN32P60P
-55 ... +150
-55 ... +150
- 600
- 2.5
Maximum Ratings
Characteristic Values
Min.
1.3/11.5
1.5/13
- 600
- 600
2500
3000
- 32
- 90
- 32
±20
±30
890
150
300
260
3.5
30
10
Typ.
- 250 μA
±100 nA
Nm/lb.in.
Nm/lb.in.
- 4.5
350 mΩ
- 50 μA
Max.
V/ns
V~
V~
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
V
V
g
J
V
I
R
miniBLOC, SOT-227 (IXTN)
Features
Applications
G = Gate
S = Source
Either source terminal at miniBLOC can
be used as Main or Kelvin Source.
D25
International standard package
Rugged PolarP
Avalanche Rated
Low package inductance
Hight side switching
Push-pull amplifiers
DC Choppers
Automatic test equipment
DS(on)
DSS
E153432
G
≤ ≤ ≤ ≤ ≤
=
=
S
D = Drain
TM
- 600V
- 32A
process
350mΩ Ω Ω Ω Ω
D
DS99991(05/08)
S

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IXTN32P60P Summary of contents

Page 1

... ±20V GSS DSS DS DSS -10V 0.5 • I DS(on © 2008 IXYS CORPORATION, All rights reserved Preliminary Technical Information IXTN32P60P Maximum Ratings - 600 = 1MΩ - 600 GS ±20 ± 3.5 ≤ 150° 890 -55 ... +150 150 -55 ... +150 300 260 2500 3000 1.5/13 1.3/11.5 30 Characteristic Values Min ...

Page 2

... I = 0.5 • DSS D D25 58 0.05 Characteristic Values Min. Typ. JM 480 11.4 - 47.6 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTN32P60P Max. SOT-227B (IXTN) Outline (M4 screws (4x) supplied 0.14 °C/W °C/W Max -128 μC A 6,404,065 B1 6,683,344 ...

Page 3

... D -36 - 125ºC J -28 -24 -20 -16 - 25º -40 -50 -60 -70 IXTN32P60P Fig. 2. Extended Output Characteristics @ 25º -10V -12 -15 - Volts DS Fig Normalized to I DS(on) Junction Temperature V = -10V 32A D -50 - Degrees Centigrade J Fig. 6. Maximum Drain Current vs. ...

Page 4

... V DS IXYS reserves the right to change limits, test conditions, and dimensions. -5.0 -5.5 -6 25ºC J -2.4 -2.8 -3.2 -3.6 - Volts - 100.0 C iss - C oss C rss -25 -30 -35 -40 - Volts IXTN32P60P Fig. 8. Transconductance -10 -15 -20 -25 - Amperes D Fig. 10. Gate Charge - 300V - -16A D ...

Page 5

... IXYS CORPORATION, All rights reserved Fig. 13. Maximum Transient Thermal Impedance 0.001 0.01 Pulse Width - Seconds IXTN32P60P 0.1 1 IXYS REF: T_32P60P(B9) 6-03-08 10 ...

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