IXTN32P60P IXYS, IXTN32P60P Datasheet - Page 3

• Manufacturer Part Number: IXTN32P60P
• Description: MOSFET P-CH 600V 32A SOT227
• Manufacturer: IXYS
• Series: PolarP™r

Specifications of IXTN32P60P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 350 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 32A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 196nC @ 10V
• Input Capacitance (ciss) @ Vds: 11100pF @ 25V
• Power - Max: 890W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Vdss, Max, (v): -600
• Id(cont), Tc=25°c, (a): -32
• Rds(on), Max, Tj=25°c, (?): 0.350
• Ciss, Typ, (pf): 11100
• Qg, Typ, (nc): 196
• Trr, Typ, (ns): 480
• Pd, (w): 890
• Rthjc, Max, (k/w): 0.14
• Package Style: SOT-227
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2008 IXYS CORPORATION, All rights reserved
-32
-28
-24
-20
-16
-12
-32
-28
-24
-20
-16
-12
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
-8
-4
-8
-4
0
0
0
0
0
Fig. 5. R
V
-1
-2
GS
-10
= -10V
-2
Fig. 1. Output Characteristics
-4
Fig. 3. Output Characteristics
DS(on)
-20
-3
-6
Drain Current
Normalized to I
-4
-8
I
D
-30
V
V
@ 125ºC
@ 25ºC
- Amperes
DS
DS
-10
-5
- Volts
- Volts
-40
T
V
J
-12
-6
GS
= 125ºC
V
GS
= -10V
T
= -10V
-7V
-14
-7
J
D
-50
- 7V
= 25ºC
- 6V
- 5V
= -16A vs.
-16
-8
- 6V
- 5V
-60
-18
-9
-10
-70
-20
-70
-60
-50
-40
-30
-20
-10
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-36
-32
-28
-24
-20
-16
-12
-8
-4
0
0
-50
-50
0
V
Fig. 4. R
Fig. 2. Extended Output Characteristics
-3
GS
-25
-25
= -10V
Fig. 6. Maximum Drain Current vs.
-6
DS(on)
0
0
Junction Temperature
T
-9
J
T
Case Temperature
- Degrees Centigrade
J
- Degrees Centigrade
25
25
Normalized to I
-12
V
@ 25ºC
DS
I
-15
D
50
50
- Volts
V
= - 32A
GS
IXTN32P60P
= -10V
-18
- 7V
- 6V
- 5V
75
75
-21
D
= -16A vs.
100
100
I
D
-24
= -16A
125
125
-27
150
150
-30