IXFN56N90P IXYS, IXFN56N90P Datasheet

MOSFET N-CH SOT-227B

IXFN56N90P

Manufacturer Part Number
IXFN56N90P
Description
MOSFET N-CH SOT-227B
Manufacturer
IXYS
Series
Polar™r
Datasheet

Specifications of IXFN56N90P

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
135 mOhm @ 28A, 10V
Drain To Source Voltage (vdss)
900V
Current - Continuous Drain (id) @ 25° C
56A
Vgs(th) (max) @ Id
6.5V @ 3mA
Gate Charge (qg) @ Vgs
375nC @ 10V
Input Capacitance (ciss) @ Vds
23000pF @ 25V
Power - Max
1000W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
135 mOhms
Forward Transconductance Gfs (max / Min)
44 S
Drain-source Breakdown Voltage
900 V
Continuous Drain Current
56 A
Power Dissipation
1000 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Gate Charge Qg
375 nC
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
900
Id(cont), Tc=25°c, (a)
56
Rds(on), Max, Tj=25°c, (?)
0.145
Ciss, Typ, (pf)
23000
Qg, Typ, (nc)
375
Trr, Typ, (ns)
-
Trr, Max, (ns)
300
Pd, (w)
1000
Rthjc, Max, (ºc/w)
0.125
Package Style
SOT-227
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXFN56N90P
Manufacturer:
IXYS
Quantity:
13 064
Polar
Power MOSFET
Symbol
V
V
V
V
I
I
I
E
dv/dt
P
T
T
T
T
V
M
Weight
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
(T
BV
V
I
I
R
© 2011 IXYS CORPORATION, All Rights Reserved
D25
DM
A
GSS
DSS
J
JM
stg
L
DSS
DGR
GSS
GSM
AS
D
ISOL
GS(th)
DS(on)
d
J
DSS
= 25°C, Unless Otherwise Specified)
TM
HiPerFET
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
1.6mm (0.062 in.) from case for 10s
50/60 Hz, RMS
I
Mounting Torque
Terminal Connection Torque
Test Conditions
V
V
V
V
V
ISOL
S
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, Pulse Width Limited by T
= 25°C
= 25°C
≤ I
= 25°C
≤ 1mA
= 0V, I
= V
= ± 30V, V
= V
= 10V, I
DM
, V
GS
DSS
, I
D
, V
DD
D
D
= 8mA
= 3mA
= 0.5 • I
≤ V
GS
DS
= 0V
DSS
= 0V
TM
, T
D25
J
GS
≤ 150°C
, Note 1
= 1MΩ
T
J
= 125°C
t = 1s
t = 1min
JM
IXFN56N90P
900
Characteristic Values
Min.
3.5
-55 ... +150
-55 ... +150
Maximum Ratings
1.3/11.5
1.5/13
1000
2500
3000
± 30
± 40
900
900
168
150
300
Typ.
56
28
20
30
2
± 200
Max.
145 mΩ
Nm/lb.in.
Nm/lb.in.
6.5
50
5 mA
V/ns
V~
V~
nA
μA
°C
°C
°C
°C
W
V
V
V
V
A
A
A
V
V
J
g
V
I
R
t
miniBLOC
G = Gate
S = Source
Either Source terminal S can be used as the
Source terminal or the Kelvin Source (gate
return) terminal.
Features
Advantages
Applications
D25
rr
Isolation
International Standard Package
miniBLOC, with Aluminium Nitride
Low R
Avalanche Rated
Low Package Inductance
Fast Intrinsic Rectifier
High Power Density
Easy to Mount
Space Savings
Switch-Mode and Resonant-Mode
DC-DC Converters
Laser Drivers
AC and DC Motor Drives
Robotics and Servo Controls
Power Supplies
DS(on)
DSS
E153432
DS(on)
G
= 900V
= 56A
≤ ≤ ≤ ≤ ≤ 145mΩ Ω Ω Ω Ω
≤ ≤ ≤ ≤ ≤ 300ns
and Q
S
D = Drain
G
D
DS100066A(02/11)
S

IXFN56N90P Summary of contents

Page 1

... ± 30V GSS DSS DS DSS 10V 0.5 • I DS(on D25 © 2011 IXYS CORPORATION, All Rights Reserved IXFN56N90P Maximum Ratings 900 = 1MΩ 900 GS ± 30 ± 168 ≤ 150° 1000 -55 ... +150 150 -55 ... +150 300 t = 1min 2500 3000 1.5/13 1.3/11.5 30 Characteristic Values Min ...

Page 2

... I = 0.5 • DSS D D25 145 0.05 Characteristic Values Min. Typ. JM 1.8 15 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXFN56N90P SOT-227B (IXFN) Outline Max. S Ω (M4 screws (4x) supplied 0.125 °C/W °C/W Max 224 A 1.5 V 300 ns μC A 6,404,065 B1 ...

Page 3

... J 3.0 = 10V GS 2.6 8V 2.2 1.8 7V 1.4 1.0 6V 0 28A Value vs 125º 25º 100 120 IXFN56N90P Fig. 2. Extended Output Characteristics @ 10V Volts DS Fig Normalized to I DS(on) Junction Temperature V = 10V GS I -50 - Degrees Centigrade J Fig. 6. Maximum Drain Current vs. Case Temperature ...

Page 4

... MHz IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions 125ºC J 25ºC - 40ºC 7.0 7.5 8.0 8 25ºC J 0.8 0.9 1.0 1.1 1.2 C iss C oss C rss 0.001 Volts IXFN56N90P Fig. 8. Transconductance Amperes D Fig. 10. Gate Charge 450V 28A 10mA ...

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