IXFN56N90P IXYS, IXFN56N90P Datasheet - Page 2

MOSFET N-CH SOT-227B

IXFN56N90P

Manufacturer Part Number
IXFN56N90P
Description
MOSFET N-CH SOT-227B
Manufacturer
IXYS
Series
Polar™r
Datasheet

Specifications of IXFN56N90P

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
135 mOhm @ 28A, 10V
Drain To Source Voltage (vdss)
900V
Current - Continuous Drain (id) @ 25° C
56A
Vgs(th) (max) @ Id
6.5V @ 3mA
Gate Charge (qg) @ Vgs
375nC @ 10V
Input Capacitance (ciss) @ Vds
23000pF @ 25V
Power - Max
1000W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
135 mOhms
Forward Transconductance Gfs (max / Min)
44 S
Drain-source Breakdown Voltage
900 V
Continuous Drain Current
56 A
Power Dissipation
1000 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Gate Charge Qg
375 nC
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
900
Id(cont), Tc=25°c, (a)
56
Rds(on), Max, Tj=25°c, (?)
0.145
Ciss, Typ, (pf)
23000
Qg, Typ, (nc)
375
Trr, Typ, (ns)
-
Trr, Max, (ns)
300
Pd, (w)
1000
Rthjc, Max, (ºc/w)
0.125
Package Style
SOT-227
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXFN56N90P
Manufacturer:
IXYS
Quantity:
13 064
Symbol
(T
g
R
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
(T
I
I
V
t
Q
I
Note
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
S
SM
RM
d(on)
r
d(off)
f
rr
fs
SD
Gi
iss
oss
rss
thJC
thCS
g(on)
gs
gd
RM
J
J
= 25°C Unless Otherwise Specified)
= 25°C Unless Otherwise Specified)
1.
I
V
Test Conditions
Resistive Switching Times
V
R
F
Test Conditions
V
Gate Input Resistance
V
V
V
Repetitive, Pulse Width Limited by T
I
Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
F
R
= 0.5 • I
GS
DS
GS
G
GS
GS
= I
= 100V, V
= 10V, V
= 1Ω (External)
= 0V
= 20V, I
= 10V, V
S
= 0V, V
, V
GS
D25
= 0V, Note 1
, -di/dt = 100A/μs
GS
D
DS
DS
DS
= 0.5 • I
= 0V
= 0.5 • V
= 25V, f = 1MHz
4,835,592
4,881,106
= 0.5 • V
D25
DSS
, Note 1
4,931,844
5,017,508
5,034,796
DSS
, I
, I
D
D
= 0.5 • I
= 0.5 • I
5,049,961
5,063,307
5,187,117
JM
D25
D25
5,237,481
5,381,025
5,486,715
27
Characteristic Values
Min.
Characteristic Values
Min.
1385
6,162,665
6,259,123 B1
6,306,728 B1
Typ.
0.85
0.05
106
375
145
1.8
44
15
23
38
80
74
80
93
Typ.
0.125 °C/W
Max.
6,404,065 B1
6,534,343
6,583,505
224
300 ns
1.5
56
Max.
°C/W
nC
nC
nC
μC
nF
pF
pF
ns
ns
ns
ns
Ω
S
A
A
V
A
6,683,344
6,710,405 B2 6,759,692
6,710,463
SOT-227B (IXFN) Outline
6,727,585
6,771,478 B2 7,071,537
(M4 screws (4x) supplied)
IXFN56N90P
7,005,734 B2
7,063,975 B2
7,157,338B2