APTC80SK15T1G Microsemi Power Products Group, APTC80SK15T1G Datasheet - Page 3

• Manufacturer Part Number: APTC80SK15T1G
• Description: MOSFET N-CH 800V 28A SP1
• Manufacturer: Microsemi Power Products Group

Specifications of APTC80SK15T1G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 150 mOhm @ 14A, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 28A
• Vgs(th) (max) @ Id: 3.9V @ 2mA
• Gate Charge (qg) @ Vgs: 180nC @ 10V
• Input Capacitance (ciss) @ Vds: 4507pF @ 25V
• Power - Max: 277W
• Mounting Type: Chassis Mount
• Package / Case: SP1
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Temperature sensor NTC
Symbol Characteristic
Symbol Characteristic
SP1 Package outline
Thermal and package characteristics
Torque
B
V
R
T
R
Wt
T
T
ISOL
STG
25/85
thJC
25
C
J
Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
Resistance @ 25°C
T
25
= 298.15 K
See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com
(dimensions in mm)
R
T
=
exp
(see application note APT0406 on www.microsemi.com for more information).



B
25
/
85
R

 

25
T
1
25
−
T
1

 

www.microsemi.com



T: Thermistor temperature
R
T
: Thermistor value at T
To heatsink
Transistor
Diode
APTC80SK15T1G
M4
2500
Min
Min
-40
-40
-40
2.5
3952
Typ
Typ
50
Max
0.45
Max
150
125
100
1.2
4.7
80
°C/W
Unit
Unit
N.m
kΩ
°C
K
V
g
3 – 6