APT17F120J Microsemi Power Products Group, APT17F120J Datasheet
APT17F120J
Manufacturer Part Number
APT17F120J
Description
MOSFET N-CH 1200V 17A SOT-227
Manufacturer
Microsemi Power Products Group
Datasheet
1.APT17F120J.pdf
(4 pages)
Specifications of APT17F120J
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
290 mOhm @ 11A, 10V
Drain To Source Voltage (vdss)
1200V (1.2kV)
Current - Continuous Drain (id) @ 25° C
17A
Gate Charge (qg) @ Vgs
90nC @ 10V
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Max
-
Vgs(th) (max) @ Id
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
APT17F120J
Manufacturer:
APT
Quantity:
1 000
Part Number:
APT17F120J
Quantity:
124
Absolute Maximum Ratings
Thermal and Mechanical Characteristics
Symbol
Symbol
V
T
Torque
POWER MOS 8
'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability
in ZVS phase shifted bridge and other circuits through reduced t
recovery dv/dt capability. Low gate charge, high gain, and a greatly reduced ratio of C
result in excellent niose immunity and low switching loss. The intrinsic gate resistance and
capacitance of the poly-silicon gate structure help control di/dt during switching, resulting in
low EMI and reliable paralleling, even when switching at very high frequency.
FEATURES
R
J
Isolation
R
V
E
,T
I
W
• Fast switching with low EMI
• Low t rr for high reliability
• Ultra low C rss for improved noise immunity
• Low gate charge
• Avalanche energy rated
• RoHS compliant
I
P
DM
I
AR
θ CS
θ JC
GS
AS
D
D
STG
T
Parameter
Continuous Drain Current @ T
Continuous Drain Current @ T
Pulsed Drain Current
Gate-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current, Repetitive or Non-Repetitive
Characteristic
Total Power Dissipation @ T
Junction to Case Thermal Resistance
Case to Sink Thermal Resistance, Flat, Greased Surface
Operating and Storage Junction Temperature Range
RMS Voltage
Package Weight
Terminals and Mounting Screws.
®
is a high speed, high voltage N-channel switch-mode power MOSFET. This
(50-60hHz Sinusoidal Wavefomr from Terminals to Mounting Base for 1 Min.)
N-Channel FREDFET
1
C
= 25°C
C
C
2
Microsemi Website - http://www.microsemi.com
= 25°C
= 100°C
rr
, soft recovery, and high
TYPICAL APPLICATIONS
• ZVS phase shifted and other full full bridge
• Half bridge
• PFC and other boost converter
• Buck converter
• Single and two switch forward
• Flyback
rss
/C
1200V, 18A, 0.58Ω Max, t rr ≤330ns
iss
2500
Min
-55
Single die FREDFET
ISOTOP
Ratings
APT17F120J
Typ
0.15
1.03
29.2
2165
APT17F120J
104
±30
18
12
14
®
Max
0.23
545
150
1.1
10
"UL Recognized"
file # E145592
G
°C/W
in·lbf
Unit
Unit
N·m
mJ
°C
oz
W
V
A
V
A
g
D
S
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APT17F120J Summary of contents
Page 1
... Flyback = 25° 100° 25°C C Microsemi Website - http://www.microsemi.com APT17F120J 1200V, 18A, 0.58Ω Max ≤330ns /C rss iss "UL Recognized" file # E145592 ® ISOTOP APT17F120J Single die FREDFET G Ratings Unit 18 12 104 ±30 2165 mJ 14 Min Typ Max Unit 545 W 0.23 ° ...
Page 2
... 125° 25°C 1. 125°C 4. 25° 125° 100V 67 (BR)DSS = 67 calculate C DS (BR)DSS o(er) + 1.43E-10. APT17F120J Unit Max V V/°C Ω 0. mV/°C 250 µA 1000 ±100 nA Max Unit Max Unit 18 A 104 1.1 V 330 ns 660 µC A V/ns ...
Page 3
... V , GATE-TO-SOURCE VOLTAGE (V) GS Figure 4, Transfer Characteristics 20,000 10,000 1000 100 200 V , DRAIN-TO-SOURCE VOLTAGE (V) DS Figure 6, Capacitance vs Drain-to-Source Voltage 100 0 SOURCE-TO-DRAIN VOLTAGE (V) SD Figure 8, Reverse Drain Current vs Source-to-Drain Voltage APT17F120J = & 4. MAX. DS(ON -55° 25° 125° iss C oss C rss 400 600 ...
Page 4
... Source 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) * Source Dimensions in Millimeters and (Inches) APT17F120J ds(on) 13µs 100µs 1ms = T 150°C 10ms 25°C C Scaling for Different Case & ...