APT77N60JC3 Microsemi Power Products Group, APT77N60JC3 Datasheet - Page 2

MOSFET N-CH 600V 77A SOT-227

APT77N60JC3

Manufacturer Part Number
APT77N60JC3
Description
MOSFET N-CH 600V 77A SOT-227
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of APT77N60JC3

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
35 mOhm @ 60A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
77A
Vgs(th) (max) @ Id
3.9V @ 5.4mA
Gate Charge (qg) @ Vgs
640nC @ 10V
Input Capacitance (ciss) @ Vds
13600pF @ 25V
Power - Max
568W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
APT77N60JC3MI
APT77N60JC3MI

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
APT77N60JC3
Manufacturer:
APT
Quantity:
15 500
Part Number:
APT77N60JC3
Quantity:
164
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMAL CHARACTERISTICS
DYNAMIC CHARACTERISTICS
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
1 Repetitive Rating: Pulse width limited by maximum junction
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
Symbol
Symbol
Symbol
temperature
t
R
R
C
t
C
dv
C
V
Q
Q
Q
d(off)
E
E
d(on)
E
E
I
Q
t
SM
I
θJC
θJA
oss
t
t
SD
rss
S
iss
on
off
on
off
/
gs
gd
rr
r
f
g
rr
dt
0.25
0.20
0.15
0.10
0.05
0
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current
Diode Forward Voltage
Reverse Recovery Time (I
Reverse Recovery Charge (I
Peak Diode Recovery
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Turn-on Switching Energy
Turn-off Switching Energy
Characteristic
Junction to Case
Junction to Ambient
10
-5
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.05
0.9
0.7
0.5
0.3
0.1
10
3
-4
dv
2
1
/
dt
(V
S
(Body Diode)
6
6
5
= -
GS
S
= -
77A
= 0V, I
77A
RECTANGULAR PULSE DURATION (SECONDS)
, dl
, dl
S
S
/dt = 100A/µs, V
10
= -
S
-3
/dt = 100A/µs, V
SINGLE PULSE
77A
INDUCTIVE SWITCHING @ 125°C
)
INDUCTIVE SWITCHING @ 25°C
4 Starting T
5
6 Eon includes diode reverse recovery. See figures 18, 20.
7 Repetitve avalanche causes additional power losses that can be
V
RESISTIVE SWITCHING
V
DD
Test Conditions
DD
dv
device itself.
calculated as P
I
I
I
D
D
I
D
D
= 400V, V
/
= 400V, V
= 77A, R
= 77A, R
dt
= 77A @ 125°C
V
V
= 77A @ 25°C
V
V
V
R
R
V
f = 1 MHz
DD
DD
numbers reflect the limitations of the test circuit rather than the
DS
GS
GS
G
GS
= 350V)
R
= 0.9Ω
= 300V
= 380V
10
= 25V
= 10V
= 10V
= 0V
= 350V)
j
-2
G
G
= +25°C, L = 36.0mH, R
GS
GS
= 5Ω
= 5Ω
= 15V
I
= 15V
S
AV
=E
-
I
D
AR
77A
*f
di
/
Note:
dt
MIN
MIN
Peak T J = P DM x Z θJC + T C
MIN
10
≤ 700A/µs
Duty Factor D =
-1
G
t 1
= 25Ω, Peak I
13600
4400
1670
2880
2300
3100
TYP
TYP
290
505
240
110
TYP
861
t 2
48
18
27
46
8
1
V
R
t 1
/ t 2
V
DSS
MAX
MAX
MAX
0.22
640
165
231
L
APT77N60JC3
1.2
12
40
77
6
1.0
= 10A
T
J
≤ 150
Amps
UNIT
UNIT
Volts
UNIT
°C/W
V/ns
nC
µC
pF
ns
°
µ
ns
C
J

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