APT8024JLL Microsemi Power Products Group, APT8024JLL Datasheet - Page 4

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APT8024JLL

Manufacturer Part Number
APT8024JLL
Description
MOSFET N-CH 800V 29A SOT-227
Manufacturer
Microsemi Power Products Group
Series
POWER MOS 7®r
Datasheet

Specifications of APT8024JLL

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
240 mOhm @ 14.5A, 10V
Drain To Source Voltage (vdss)
800V
Current - Continuous Drain (id) @ 25° C
29A
Vgs(th) (max) @ Id
5V @ 2.5mA
Gate Charge (qg) @ Vgs
160nC @ 10V
Input Capacitance (ciss) @ Vds
4670pF @ 25V
Power - Max
460W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
APT8024JLL
Manufacturer:
EXAR
Quantity:
101
FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE
2000
1500
1000
114
140
120
100
500
50
10
16
12
80
60
40
20
5
1
8
4
0
0
0
FIGURE 16, SWITCHING ENERGY vs CURRENT
FIGURE 10, MAXIMUM SAFE OPERATING AREA
0
0
5
1
V
I
FIGURE 14, DELAY TIMES vs CURRENT
V
R
T
L = 100µH
DS
D
V
R
T
L = 100µH
E
diode reverse recovery.
T C =+25°C
T J =+150°C
SINGLE PULSE
J
DD
G
J
LIMITED BY R DS (ON)
DD
G
ON
= 29A
OPERATION HERE
10
= 125°C
= 125°C
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
= 5Ω
= 5Ω
= 533V
= 533V
includes
Q
10
50
g
15
, TOTAL GATE CHARGE (nC)
V DS = 400V
E
on
V DS = 160V
20
10
100
20
25
t
I
I
D
D
d(off)
E
(A)
off
(A)
30
150
30
V DS = 640V
35
100
t
d(on)
40
200
40
45
250
800
50
50
100µS
10mS
1mS
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
20,000
10,000
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
1,000
4000
3500
3000
2500
2000
1500
1000
100
200
100
500
FIGURE 15, RISE AND FALL TIMES vs CURRENT
10
80
70
60
50
40
30
20
10
1
0
0
0.3
0
0
0
V
V
V
R
T
L = 100µH
V
I
T
L = 100µH
E
diode reverse recovery.
D
DS
SD
DD
J
J
G
DD
ON
= 29A
= 125°C
= 125°C
= 5Ω
5
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
= 533V
= 533V
includes
T J =+150°C
0.5
R
10
10
10 15 20 25 30
G
, GATE RESISTANCE (Ohms)
t
0.7
f
20
20
I
D
0.9
(A)
T J =+25°C
30
30
1.1
t
r
35 40 45 50
E
off
40
40
1.3
E
C rss
C iss
C oss
on
1.5
50
50

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