APT6013JVR Microsemi Power Products Group, APT6013JVR Datasheet - Page 3

• Manufacturer Part Number: APT6013JVR
• Description: MOSFET N-CH 600V 40A SOT-227
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS V®r

Specifications of APT6013JVR

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 130 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 40A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 540nC @ 10V
• Input Capacitance (ciss) @ Vds: 10560pF @ 25V
• Power - Max: 500W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
100
100
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
2.5
2.0
1.5
1.0
0.5
0.0
80
60
40
20
80
60
40
20
40
32
24
16
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
0
0
8
0
-50
25
V
0
0
V
DS
GS
I
V DS > I D (ON) x R DS (ON)MAX.
D
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
= 0.5 I
, GATE-TO-SOURCE VOLTAGE (VOLTS)
-25
T
V
@ <0.5 % DUTY CYCLE
250µSEC. PULSE TEST
GS
J
50
V GS =6V, 7V, 10V & 15V
T
, JUNCTION TEMPERATURE (°C)
50
C
= 10V
T J = +125°C
D
, CASE TEMPERATURE (°C)
T J = +25°C
[Cont.]
2
0
100
25
75
150
50
4
100
75
200
T J = -55°C
100 125 150
6
125
250
5.5V
4.5V
5V
150
300
8
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
1.20
1.15
1.10
1.05
1.00
0.95
1.15
1.10
1.05
1.00
0.95
0.90
100
1.2
1.1
1.0
0.9
0.8
0.7
0.6
80
60
40
20
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
0
-50
-50
V
0
0
DS
FIGURE 5, R
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
GS
-25
-25
T
I
J
D
= 10V @ 0.5 I
NORMALIZED TO
, JUNCTION TEMPERATURE (°C)
T
, DRAIN CURRENT (AMPERES)
15
C
3
V GS =7V, 10V & 15V
, CASE TEMPERATURE (°C)
V GS =10V
0
0
DS
25
25
30
(ON) vs DRAIN CURRENT
D
6
[Cont.]
50
50
45
9
75
75 100 125 150
100 125 150
V GS =20V
12
60
5.5V
4.5V
5V
6V
APT6013JVR
15
75