APT8030JVFR Microsemi Power Products Group, APT8030JVFR Datasheet

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APT8030JVFR

Manufacturer Part Number
APT8030JVFR
Description
MOSFET N-CH 800V 25A SOT-227
Manufacturer
Microsemi Power Products Group
Series
POWER MOS V®r
Datasheet

Specifications of APT8030JVFR

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
300 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
800V
Current - Continuous Drain (id) @ 25° C
25A
Vgs(th) (max) @ Id
4V @ 2.5mA
Gate Charge (qg) @ Vgs
510nC @ 10V
Input Capacitance (ciss) @ Vds
7900pF @ 25V
Power - Max
450W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
APT8030JVFR
Manufacturer:
APT
Quantity:
15 500
Power MOS V
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V
also achieves faster switching speeds through optimized gate layout.
• Fast Recovery Body Diode
• Lower Leakage
• Faster Switching
STATIC ELECTRICAL CHARACTERISTICS
Symbol
Symbol
T
R
BV
V
V
V
J
I
I
V
I
E
E
D(on)
DS(on)
GS(th)
I
,T
I
DSS
GSS
P
GSM
T
DSS
DM
I
AR
GS
AR
AS
D
DSS
D
STG
L
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
Pulsed Drain Current
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
On State Drain Current
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current (V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (V
Gate Threshold Voltage (V
®
is a new generation of high voltage N-Channel enhancement
POWER MOS V
1
(Repetitive and Non-Repetitive)
1
2
(V
DS
C
DS
APT Website - http://www.advancedpower.com
1
C
= 25°C
= V
• 100% Avalanche Tested
• Popular SOT-227 Package
= 25°C
> I
4
GS
GS
D(on)
2
DS
DS
, I
= ±30V, V
GS
D
(V
= V
= 0.8 V
x R
= 0V, I
= 2.5mA)
GS
DSS
DS(on)
= 10V, 0.5 I
, V
DSS
D
DS
= 250µA)
GS
Max, V
= 0V)
®
, V
= 0V)
GS
D[Cont.]
= 0V, T
GS
= 10V)
FREDFET
)
C
= 125°C)
800V 25A 0.300Ω Ω Ω Ω Ω
APT8030JVFR
®
MIN
800
25
2
APT8030JVFR
-55 to 150
ISOTOP
2500
TYP
±30
±40
800
100
450
300
3.6
25
25
50
G
®
FREDFET
0.300
1000
±100
MAX
250
"UL Recognized"
4
D
S
Ohms
Amps
Watts
Amps
Amps
UNIT
W/°C
UNIT
Volts
Volts
Volts
Volts
mJ
µA
nA
°C

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APT8030JVFR Summary of contents

Page 1

... DSS GS = ±30V 0V 2.5mA APT Website - http://www.advancedpower.com APT8030JVFR 800V 25A 0.300Ω Ω Ω Ω Ω FREDFET ® ISOTOP ® FREDFET G APT8030JVFR 800 25 100 ±30 ±40 450 3.6 -55 to 150 300 25 50 2500 MIN TYP MAX 800 25 ) 0.300 = 125°C) 1000 C ± ...

Page 2

... T = 25° 125° 25° 125° See MIL-STD-750 Method 3471 4 Starting [Cont.], 200V RECTANGULAR PULSE DURATION (SECONDS) APT8030JVFR MIN TYP MAX 6600 7900 645 900 320 480 340 510 31 47 DSS 170 250 DSS MIN TYP MAX 25 100 1.3 18 ...

Page 3

... APT8030JVFR =5.5V, 6V, 7V, 10V & 15V 4. 100 200 300 V , DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS 100 -55° +25° +125° > (ON (ON)MAX. 60 250µSEC. PULSE TEST @ <0.5 % DUTY CYCLE +125° +25° -55° GATE-TO-SOURCE VOLTAGE (VOLTS) GS FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS ...

Page 4

... H=4.8 (.187) H=4.9 (.193) (4 places) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 3.6 (.143) * Source * Source Dimensions in Millimeters and (Inches) APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 APT8030JVFR C iss C oss C rss . DRAIN-TO-SOURCE VOLTAGE (VOLTS =+150° =+25° ...

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