APT10043JVR Microsemi Power Products Group, APT10043JVR Datasheet - Page 2

• Manufacturer Part Number: APT10043JVR
• Description: MOSFET N-CH 1000V 22A SOT-227
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS V®r

Specifications of APT10043JVR

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 430 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 1000V (1kV)
• Current - Continuous Drain (id) @ 25° C: 22A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 480nC @ 10V
• Input Capacitance (ciss) @ Vds: 9000pF @ 25V
• Power - Max: 500W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1
2
DYNAMIC CHARACTERISTICS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMAL / PACKAGE CHARACTERISTICS
Symbol
Symbol
Symbol
V
Repetitive Rating: Pulse width limited by maximum junction
temperature.
Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Torque
t
t
Isolation
R
R
C
C
V
C
Q
Q
Q
d(on)
d(off)
I
Q
t
I
SM
t
t
θJC
θJA
oss
SD
rss
S
iss
gs
gd
r
rr
f
g
rr
0.005
0.001
0.05
0.01
0.3
0.1
10
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current
Diode Forward Voltage
Reverse Recovery Time (I
Reverse Recovery Charge (I
Characteristic
Junction to Case
Junction to Ambient
RMS Voltage
Maximum Torque for Device Mounting Screws and Electrical Terminations.
-5
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
D=0.5
0.02
0.01
0.05
0.2
0.1
(50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.)
10
-4
3
SINGLE PULSE
1
2
(V
(Body Diode)
S
= -I
GS
S
= -I
= 0V, I
D[Cont.]
RECTANGULAR PULSE DURATION (SECONDS)
10
D[Cont.]
-3
, dl
S
= -I
, dl
S
/dt = 100A/µs)
D[Cont.]
S
/dt = 100A/µs)
10
I
I
)
D
D
3
4
Test Conditions
-2
= I
= I
V
V
See MIL-STD-750 Method 3471
Starting T
DD
DD
V
V
V
D[Cont.]
D[Cont.]
R
f = 1 MHz
V
GS
GS
DS
G
GS
= 0.5 V
= 0.5 V
= 0.6
= 25V
= 10V
= 15V
= 0V
j
@ 25°C
@ 25°C
= +25°C, L = 5.37mH, R
Ω
DSS
DSS
10
-1
Note:
Peak T J = P DM x Z θJC + T C
2500
MIN
MIN
MIN
Duty Factor D =
1.0
t 1
G
= 25Ω, Peak I
t 2
1100
7500
TYP
TYP
TYP
675
310
320
169
17
38
14
10
51
11
t 1
/ t 2
9000
MAX
0.25
MAX
MAX
945
465
480
250
APT10043JVR
1.3
40
13
57
28
20
75
22
22
88
L
10
= 22A
Amps
°C/W
UNIT
UNIT
Volts
UNIT
Volts
lb•in
pF
nC
µC
ns
ns