APT10035JLL Microsemi Power Products Group, APT10035JLL Datasheet - Page 3

• Manufacturer Part Number: APT10035JLL
• Description: MOSFET N-CH 1000V 25A SOT-227
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS 7®r

Specifications of APT10035JLL

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 350 mOhm @ 14A, 10V
• Drain To Source Voltage (vdss): 1000V (1kV)
• Current - Continuous Drain (id) @ 25° C: 25A
• Vgs(th) (max) @ Id: 5V @ 2.5mA
• Gate Charge (qg) @ Vgs: 186nC @ 10V
• Input Capacitance (ciss) @ Vds: 5185pF @ 25V
• Power - Max: 520W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curves
Case temperature
Junction
temp. ( ”C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
(Watts)
Power
2.5
2.0
1.5
1.0
0.5
0.0
80
70
60
50
40
30
20
10
25
20
15
10
0
5
0
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
-50
25
0
V
FIGURE 4, TRANSFER CHARACTERISTICS
GS
V DS > I D (ON) x R DS (ON)MAX.
V
-25
, GATE-TO-SOURCE VOLTAGE (VOLTS)
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
I
T
GS
D
J
= 14A
T
, JUNCTION TEMPERATURE (°C)
50
= 10V
2
C
T J = +25°C
T J = +125°C
, CASE TEMPERATURE (°C)
0
RC MODEL
25
75
0.0528
0.0651
0.123
4
50
100
6
75
T J = -55°C
100 125 150
125
8
0.0203F
0.173F
0.490F
150
10
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.40
1.30
1.20
1.10
1.00
0.90
0.80
1.15
1.10
1.05
1.00
0.95
0.90
0.85
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
1.2
1.1
1.0
0.9
0.8
0.7
0.6
60
50
40
30
20
10
0
-50
-50
0
0
V
DS
FIGURE 5, R
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
-25
-25
V
T
NORMALIZED TO
I
GS
10
J
D
5
, JUNCTION TEMPERATURE (°C)
T
V GS =15,10 & 8V
, DRAIN CURRENT (AMPERES)
C
= 10V @ 14A
, CASE TEMPERATURE (°C)
0
0
V GS =10V
10
20
DS
25
25
(ON) vs DRAIN CURRENT
15
30
50
50
6.5V
5.5V
6V
7V
5V
V GS =20V
75
75
20
40
100 125 150
100 125 150
25
50
APT10035JLL
30
60