APTM120DA56T1G Microsemi Power Products Group, APTM120DA56T1G Datasheet
APTM120DA56T1G
Specifications of APTM120DA56T1G
Related parts for APTM120DA56T1G
APTM120DA56T1G Summary of contents
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... Drain - Source ON Resistance DSon P Maximum Power Dissipation D I Avalanche current (repetitive and non repetitive) AR These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTM120DA56T1G V = 1200V DSS R = 560mΩ typ @ Tj = 25°C DSon I = 18A @ Tc = 25°C D Application • ...
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... V RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz ISOL T Operating junction temperature range J T Storage Temperature Range STG T Operating Case Temperature C Torque Mounting torque Wt Package Weight APTM120DA56T1G = 25°C unless otherwise specified j Test Conditions T = 25°C V =1200V 125° ...
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... Typical Mosfet Performance Curve Maxim um Effective Transient Therm al Im pedance, Junction to Case vs Pulse Duration 0.35 0.9 0.3 0.25 0.7 0.2 0.5 0.15 0.3 0.1 0.1 0.05 0.05 0 0.00001 0.0001 APTM120DA56T1G R T: Thermistor temperature 25 ⎤ ⎛ ⎞ Thermistor value ⎜ ⎜ ⎟ ⎟ T − ⎥ ⎝ ...
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... T , Junction Temperature (°C) J Gate Charge vs Gate to Source 12 V =240V I =14A =25° =600V =960V 120 160 200 240 280 320 Gate Charge (nC) APTM120DA56T1G Low Voltage Output Characteristics 30 T =125° = & Drain to Source Voltage (V) DS Transfert Characteristics V > D(on) DS(on) 250µs pulse test @ < ...
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... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTM120DA56T1G Single Pulse 0.001 ...