APTM120SK68T1G Microsemi Power Products Group, APTM120SK68T1G Datasheet - Page 4

• Manufacturer Part Number: APTM120SK68T1G
• Description: MOSFET N-CH 1200V 15A SP1
• Manufacturer: Microsemi Power Products Group

Specifications of APTM120SK68T1G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 816 mOhm @ 12A, 10V
• Drain To Source Voltage (vdss): 1200V (1.2kV)
• Current - Continuous Drain (id) @ 25° C: 15A
• Vgs(th) (max) @ Id: 5V @ 2.5mA
• Gate Charge (qg) @ Vgs: 260nC @ 10V
• Input Capacitance (ciss) @ Vds: 6696pF @ 25V
• Power - Max: 357W
• Mounting Type: Chassis Mount
• Package / Case: SP1
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

2.5
1.5
0.5
35
30
25
20
15
10
12
10
5
0
3
2
1
0
8
6
4
2
0
25
0
Low Voltage Output Characteristics
0
V
V
I
I
T
D
Gate Charge vs Gate to Source
D
GS
Normalized R
V
GS
=12A
J
=12A
=25°C
T
DS
=10V
=10V
40
J
, Drain to Source Voltage (V)
, Junction Temperature (°C)
50
5
80
Gate Charge (nC)
75
V
120 160 200 240 280
DS(on)
DS
=600V
10
V
DS
vs. Temperature
100
T
=240V
J
=25°C
15
125
V
T
DS
J
=125°C
=960V
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150
20
APTM120SK68T1G
10000
1000
Capacitance vs Drain to Source Voltage
20
15
10
20
15
10
100
5
0
10
5
0
Low Voltage Output Characteristics
0
0
0
T
V
V
250µs pulse test @ < 0.5
duty cycle
J
=125°C
GS
DS
V
V
V
=6, 7,8 & 9V
> I
GS
DS
DS
5
1
Transfert Characteristics
, Drain to Source Voltage (V)
D(on)
, Gate to Source Voltage (V)
, Drain to Source Voltage (V)
50
xR
10
2
DS(on)
MAX
T
15
100
3
J
T
=25°C
J
=125°C
20
4
150
5
25
Ciss
Coss
Crss
4.5V
5V
200
6
30
4 – 5