APTM100SK33T1G Microsemi Power Products Group, APTM100SK33T1G Datasheet - Page 4

• Manufacturer Part Number: APTM100SK33T1G
• Description: MOSFET N-CH 1000V 23A SP1
• Manufacturer: Microsemi Power Products Group

Specifications of APTM100SK33T1G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 396 mOhm @ 18A, 10V
• Drain To Source Voltage (vdss): 1000V (1kV)
• Current - Continuous Drain (id) @ 25° C: 23A
• Vgs(th) (max) @ Id: 5V @ 2.5mA
• Gate Charge (qg) @ Vgs: 305nC @ 10V
• Input Capacitance (ciss) @ Vds: 7868pF @ 25V
• Power - Max: 390W
• Mounting Type: Chassis Mount
• Package / Case: SP1
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

12
10
60
50
40
30
20
10
8
6
4
2
0
2.5
1.5
0.5
0
0
3
2
1
0
0
25
Low Voltage Output Characteristics
I
T
D
V
J
=18A
GS
=25°C
Normalized R
40
V
I
D
V
Gate Charge vs Gate to Source
=10V
GS
=18A
T
DS
J
=10V
, Junction Temperature (°C)
, Drain to Source Voltage (V)
50
80
5
Gate Charge (nC)
120 160 200 240 280 320
V
75
DSon
DS
=500V
10
vs. Temperature
T
J
=25°C
100
V
DS
=200V
V
15
DS
125
T
=800V
J
=125°C
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150
20
100000
APTM100SK33T1G
10000
40
35
30
25
20
15
10
40
30
20
10
1000
5
0
0
100
10
0
1
1
Capacitance vs Drain to Source Voltage
V
250µs pulse test @ < 0.5 duty cycle
0
Low Voltage Output Characteristics
DS
T
V
V
V
J
> I
GS
=125°C
DS
5
DS
V
Transfert Characteristics
D
2
, Gate to Source Voltage (V)
GS
, Drain to Source Voltage (V)
(on)xR
, Drain to Source Voltage (V)
=6, 7, 8 &9V
50
10
DS(on)
3
MAX
15
T
100
J
=25°C
4
T
J
=125°C
20
150
5
25
Ciss
4.5V
Coss
5V
Crss
200
6
30
4 – 5