APTC80DSK15T3G Microsemi Power Products Group, APTC80DSK15T3G Datasheet

no-image

APTC80DSK15T3G

Manufacturer Part Number
APTC80DSK15T3G
Description
MOSFET MOD DUAL BUCK CHOPPER SP3
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of APTC80DSK15T3G

Fet Type
2 N-Channel (Dual)
Fet Feature
Standard
Rds On (max) @ Id, Vgs
150 mOhm @ 14A, 10V
Drain To Source Voltage (vdss)
800V
Current - Continuous Drain (id) @ 25° C
28A
Vgs(th) (max) @ Id
3.9V @ 2mA
Gate Charge (qg) @ Vgs
180nC @ 10V
Input Capacitance (ciss) @ Vds
4507pF @ 25V
Power - Max
277W
Mounting Type
Chassis Mount
Package / Case
SP3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Absolute maximum ratings
All multiple inputs and outputs must be shorted together
Symbol
R
V
V
E
E
I
I
Super Junction MOSFET
P
DSon
I
DM
AR
DSS
AR
AS
D
GS
D
18
19
Dual Buck chopper
29
30
31
32
Example: 13/14 ; 29/30 ; 22/23 …
Drain - Source Breakdown Voltage
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
28 27 26
CR1
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
Power Module
15
Q1
29
2
3
25
4
30
22
23
13
23 22
14
7
8
7
31
Parameter
8
R1
20
Q2
10
19
CR2
32
18
11 12
16
16
15
14
13
www.microsemi.com
11
10
Application
Features
Benefits
V
R
I
T
T
T
D
c
c
c
DSS
DSon
= 25°C
= 80°C
= 25°C
= 28A @ Tc = 25°C
AC and DC motor control
Switched Mode Power Supplies
Kelvin source for easy drive
Very low stray inductance
Internal thermistor for temperature monitoring
High level of integration
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
Each leg can be easily paralleled to achieve a single
buck of twice the current capability
RoHS Compliant
-
-
-
-
-
-
APTC80DSK15T3G
= 800V
= 150mΩ max @ Tj = 25°C
Ultra low R
Low Miller capacitance
Ultra low gate charge
Avalanche energy rated
Very rugged
Symmetrical design
Max ratings
800
110
±30
150
277
670
0.5
28
21
17
DSon
Unit
mΩ
mJ
W
V
A
V
A
1 – 6

Related parts for APTC80DSK15T3G

APTC80DSK15T3G Summary of contents

Page 1

... Avalanche current (repetitive and non repetitive Repetitive Avalanche Energy AR E Single Pulse Avalanche Energy AS These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTC80DSK15T3G V = 800V DSS R = 150mΩ max @ Tj = 25°C DSon I = 28A @ Tc = 25°C D Application • ...

Page 2

... Symbol Characteristic V Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr APTC80DSK15T3G = 25°C unless otherwise specified j Test Conditions T = 25° 0V,V = 800V 125° 0V,V = 800V j GS ...

Page 3

... 298.15 K 25/  exp B   SP3 Package outline (dimensions in mm See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com APTC80DSK15T3G Transistor Diode To heatsink R T: Thermistor temperature 25    Thermistor value at T     T −  ...

Page 4

... Low Voltage Output Characteristics =15&10V Drain to Source Voltage ( Drain Current DS(on) 1.4 Normalized to 1.3 V =10V @ 14A GS 1.2 1.1 1 0.9 0 Drain Current (A) D APTC80DSK15T3G Single Pulse 0.001 0.01 rectangular Pulse Duration (Seconds) 100 Drain Current vs Case Temperature =10V =20V www.microsemi.com 0.1 1 ...

Page 5

... T , Case Temperature (°C) C Capacitance vs Drain to Source Voltage 100000 10000 1000 Coss 100 Crss Drain to Source Voltage (V) DS www.microsemi.com APTC80DSK15T3G ON resistance vs Temperature 3.0 V =10V 14A 2.5 D 2.0 1.5 1.0 0.5 0.0 -50 0 150 T , Junction Temperature (°C) J Maximum Safe Operating Area 1000 ...

Page 6

... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTC80DSK15T3G 50 t ...

Related keywords