APT50M50JVFR Microsemi Power Products Group, APT50M50JVFR Datasheet - Page 3

• Manufacturer Part Number: APT50M50JVFR
• Description: MOSFET N-CH 500V 77A SOT-227
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS V®r

Specifications of APT50M50JVFR

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 50 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 77A
• Vgs(th) (max) @ Id: 4V @ 5mA
• Gate Charge (qg) @ Vgs: 1000nC @ 10V
• Input Capacitance (ciss) @ Vds: 19600pF @ 25V
• Power - Max: 700W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
250
200
150
100
250
200
150
100
2.5
2.0
1.5
1.0
0.5
0.0
50
50
80
60
40
20
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
0
0
0
-50
25
V
0
0
APT50M50JVFR
V
DS
GS
V DS > I D (ON) x R DS (ON)MAX.
I
D
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
= 0.5 I
, GATE-TO-SOURCE VOLTAGE (VOLTS)
-25
250 SEC. PULSE TEST
@ <0.5 % DUTY CYCLE
T
V
GS
J
V GS =7V, 10V & 15V
T
, JUNCTION TEMPERATURE ( C)
50
50
C
= 10V
D
, CASE TEMPERATURE ( C)
[Cont.]
2
0
T J = +125 C
T J = +25 C
25
100
75
50
4
T J = -55 C
150
100
75
100 125 150
6
T J = -55 C
200
125
6.5V
5.5V
4.5V
6V
5V
T J = +125 C
150
250
8
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.15
1.10
1.05
1.00
0.95
0.90
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
250
200
150
100
1.3
1.2
1.1
1.0
0.9
1.2
1.1
1.0
0.9
0.8
0.7
0.6
50
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
0
-50
-50
0
V
0
DS
FIGURE 5, R
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
GS
-25
-25
T
V GS =10V
I
J
D
= 10V @ 0.5 I
, JUNCTION TEMPERATURE ( C)
2
NORMALIZED TO
T
, DRAIN CURRENT (AMPERES)
50
C
, CASE TEMPERATURE ( C)
0
0
4
DS
25
25
100
(ON) vs DRAIN CURRENT
D
[Cont.]
V GS =7V
50
V GS =10V
50
6
150
V GS =20V
75
75 100 125 150
V GS =15V
8
100 125 150
200
10
6.5V
5.5V
4.5V
6V
5V
250
12