APT50M38JLL Microsemi Power Products Group, APT50M38JLL Datasheet - Page 3

• Manufacturer Part Number: APT50M38JLL
• Description: MOSFET N-CH 500V 88A SOT-227
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS 7®r

Specifications of APT50M38JLL

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 38 mOhm @ 44A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 88A
• Vgs(th) (max) @ Id: 5V @ 5mA
• Gate Charge (qg) @ Vgs: 270nC @ 10V
• Input Capacitance (ciss) @ Vds: 12000pF @ 25V
• Power - Max: 694W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Case temperature
Junction
temp. ( ”C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
(Watts)
Power
250
200
150
100
2.5
2.0
1.5
1.0
0.5
0.0
50
90
80
70
60
50
40
30
20
10
0
0
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
-50
25
0
V
V DS > I D (ON) x R DS (ON)MAX.
FIGURE 4, TRANSFER CHARACTERISTICS
GS
V
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
, GATE-TO-SOURCE VOLTAGE (VOLTS)
-25
1
I
GS
T
D
J
= 44A
T
, JUNCTION TEMPERATURE (°C)
50
= 10V
C
, CASE TEMPERATURE (°C)
2
0
RC MODEL
3
25
75
0.0244
0.133
0.0218
T J = +125°C
T J = +25°C
50
4
T J = -55°C
100
75
5
100 125 150
6
125
0.0731F
0.701F
20.1F
7
150
8
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.15
1.10
1.05
1.00
0.95
0.90
0.85
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
300
250
200
150
100
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
1.4
1.3
1.2
1.1
1.0
0.9
0.8
1.2
1.1
1.0
0.9
0.8
0.7
0.6
50
0
-50
-50
0
0
V
DS
FIGURE 5, R
15 &10V
20
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
-25
-25
T
NORMALIZED TO
GS
I
J
D
5
, JUNCTION TEMPERATURE (°C)
T
, DRAIN CURRENT (AMPERES)
= 10V @ 44A
C
40
, CASE TEMPERATURE (°C)
0
0
10
60
DS
V GS =20V
25
25
(ON) vs DRAIN CURRENT
8V
80 100 120 140 160 180
7.5V
15
50
50
V GS =10V
7V
75
75
20
6.5V
100 125 150
100 125 150
25
6V
5.5V
30