APT40M35JVFR Microsemi Power Products Group, APT40M35JVFR Datasheet - Page 2

• Manufacturer Part Number: APT40M35JVFR
• Description: MOSFET N-CH 400V 93A SOT-227
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS V®r

Specifications of APT40M35JVFR

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 35 mOhm @ 46.5A, 10V
• Drain To Source Voltage (vdss): 400V
• Current - Continuous Drain (id) @ 25° C: 93A
• Vgs(th) (max) @ Id: 4V @ 5mA
• Gate Charge (qg) @ Vgs: 1065nC @ 10V
• Input Capacitance (ciss) @ Vds: 20160pF @ 25V
• Power - Max: 700W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

DYNAMIC CHARACTERISTICS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMAL/ PACKAGE CHARACTERISTICS
1
2
Symbol
Symbol
Symbol
V
Torque
Repetitive Rating: Pulse width limited by maximum junction
temperature.
Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
t
t
Isolation
C
R
R
C
C
d
d
dv
I
V
Q
Q
Q
RRM
I
Q
(on)
(off)
SM
t
I
t
t
θJC
θJA
oss
rss
S
SD
iss
rr
gs
gd
/
r
f
g
rr
dt
0.0005
0.005
0.001
0.05
0.01
0.2
0.1
10
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current
Diode Forward Voltage
Peak Diode Recovery
Reverse Recovery Time
(I
Reverse Recovery Charge
(I
Peak Recovery Current
(I
Characteristic
Junction to Case
Junction to Ambient
RMS Voltage
Maximum Torque for Device Mounting Screws and Electrical Terminations.
S
S
S
-5
= -93A,
= -93A,
= -93A,
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
D=0.5
0.02
0.05
0.01
0.2
0.1
di
di
di
/
/
/
dt
dt
dt
(50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.)
= 100A/µs)
= 100A/µs)
= 100A/µs)
10
SINGLE PULSE
-4
3
dv
1
2
/
dt
(Body Diode)
(V
5
GS
= 0V, I
10
RECTANGULAR PULSE DURATION (SECONDS)
-3
S
= - 93A)
10
3
4
5
-2
Test Conditions
I
I
D
D
See MIL-STD-750 Method 3471
Starting T
I
S
V
= 93A @ 25°C
V
= 93A @ 25°C
V
V
R
V
f = 1 MHz
V
≤
DD
DD
GS
GS
DS
G
GS
T
T
T
T
T
T
I
D
= 0.6Ω
= 200V
= 200V
j
j
j
j
j
j
= 25V
= 10V
= 15V
= 93A,
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
= 0V
j
= +25°C, L = 0.83mH, R
di
10
/
dt
-1
= 100A/µs, T
Note:
Peak T J = P DM x Z θJC + T C
2500
MIN
MIN
MIN
Duty Factor D =
j
1.0
≤
t 1
G
150°C, R
= 25Ω, Peak I
t 2
16800
2400
1070
TYP
TYP
TYP
710
340
2.2
80
20
30
75
14
16
33
9
t 1
/ t
2
G
= 2.0Ω V
APT40M35JVFR
20160
MAX
MAX
MAX
3360
1605
1065
0.18
372
300
600
120
510
115
1.3
40
10
93
15
40
60
28
L
10
= 93A
R
= 400V.
Amps
Amps
°C/W
UNIT
UNIT
UNIT
Volts
Volts
V/ns
lb•in
nC
µC
pF
ns
ns