APL602J Microsemi Power Products Group, APL602J Datasheet - Page 3
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APL602J
Manufacturer Part Number
APL602J
Description
MOSFET N-CH 600V 43A SOT-227
Manufacturer
Microsemi Power Products Group
Datasheet
1.APL602J.pdf
(4 pages)
Specifications of APL602J
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
125 mOhm @ 21.5A, 12V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
43A
Vgs(th) (max) @ Id
4V @ 2.5mA
Input Capacitance (ciss) @ Vds
9000pF @ 25V
Power - Max
565W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Typical Performance Curves
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
120
100
80
60
40
20
45
40
35
30
25
20
15
10
05
80
60
40
20
0
0
0
25
FIGURE 2, HIGH OUTPUT CHARACTERISTICS
0
0
V
V
V DS > I D (ON) x R DS (ON)MAX.
FIGURE 4, TRANSFER CHARACTERISTICS
DS
GS
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
T J = +25°C
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
T J = +125°C
, GATE-TO-SOURCE VOLTAGE (VOLTS)
V GS =10V, 15 V
T
50
50
2
C
, CASE TEMPERATURE (°C)
100
75
4
100
150
T J = -55°C
6
125
200
8
6.5 V
7.5 V
5.5 V
7 V
6 V
8 V
250
150
10
1.30
1.20
1.10
1.00
0.90
0.80
0.70
1.15
1.10
1.05
1.00
0.95
0.90
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
120
100
80
60
40
20
0
-50
0
FIGURE 3, LOW OUTPUT CHARACTERISTICS
0
V
DS
FIGURE 5, R
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
T
GS
NORMALIZED TO
V GS =10V
20
I
J
D
5
, JUNCTION TEMPERATURE (°C)
, DRAIN CURRENT (AMPERES)
= 10V @ 21.5A
0
40
10
DS
(ON) vs DRAIN CURRENT
15
60
50
5.5 V
7.5 V
6.5 V
6 V
7 V
8 V
V GS =10, 15V
20
80
V GS =20V
100
100
25
120
150
30
APL602J