APTM10DAM05TG Microsemi Power Products Group, APTM10DAM05TG Datasheet - Page 3

• Manufacturer Part Number: APTM10DAM05TG
• Description: MOSFET N-CH 100V 278A SP4
• Manufacturer: Microsemi Power Products Group

Specifications of APTM10DAM05TG

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5 mOhm @ 125A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 278A
• Vgs(th) (max) @ Id: 4V @ 5mA
• Gate Charge (qg) @ Vgs: 700nC @ 10V
• Input Capacitance (ciss) @ Vds: 20000pF @ 25V
• Power - Max: 780W
• Mounting Type: Chassis Mount
• Package / Case: SP4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Thermal and package characteristics
Temperature sensor NTC
Symbol Characteristic
Symbol Characteristic
SP4 Package outline
Torque
V
B
R
T
R
T
Wt
T
ISOL
STG
25/85
thJC
C
25
J
Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
Resistance @ 25°C
T
25
= 298.15 K
See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com
(dimensions in mm)
R
T
=
exp
(see application note APT0406 on www.microsemi.com for more information).



B
25
/
85
R

 

25
T
1
25
ALL DIMENSIO NS MARKED " * " ARE T OLERENCED AS :
−
T
1

 




T: Thermistor temperature
R
www.microsemi.com
T
: Thermistor value at T
To Heatsink
APTM10DAM05TG
Transistor
Diode
M5
2500
Min
Min
-40
-40
-40
2.5
3952
Typ
Typ
50
Max
0.16
0.29
Max
150
125
100
160
4.7
°C/W
Unit
Unit
N.m
kΩ
°C
K
V
g
3 - 6