APTM10DHM09TG Microsemi Power Products Group, APTM10DHM09TG Datasheet

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APTM10DHM09TG

Manufacturer Part Number
APTM10DHM09TG
Description
MOSFET MOD ASYMMETRIC BRIDGE SP4
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of APTM10DHM09TG

Fet Type
2 N-Channel (Asymmetrical Bridge)
Fet Feature
Standard
Rds On (max) @ Id, Vgs
10 mOhm @ 69.5A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
139A
Vgs(th) (max) @ Id
4V @ 2.5mA
Gate Charge (qg) @ Vgs
350nC @ 10V
Input Capacitance (ciss) @ Vds
9875pF @ 25V
Power - Max
390W
Mounting Type
Chassis Mount
Package / Case
SP4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Absolute maximum ratings
Symbol
G1
0/VBUS SENSE
S1
R
V
MOSFET Power Module
V
E
E
I
I
NTC1
P
DSon
I
DM
AR
DSS
AR
AS
D
GS
D
Asymmetrical - Bridge
Drain - Source Breakdown Voltage
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
VBUS
SENSE
S1
G1
VBUS
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
Q1
CR2
0/VBUS
OUT1
0/VBUS
0/VBUS
SENSE
G4
S4
VBUS
OUT2
Parameter
Q4
CR3
OUT1
OUT2
NTC2
NTC1
VBUS SENSE
NTC2
www.microsemi.com
G4
S4
Application
Features
Benefits
T
T
T
V
R
I
c
c
c
= 25°C
= 80°C
= 25°C
D
DSS
DSon
Welding converters
Switched Mode Power Supplies
Switched Reluctance Motor Drives
Power MOS V
Kelvin source for easy drive
Very low stray inductance
Internal thermistor for temperature monitoring
High level of integration
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
RoHS Compliant
= 139A @ Tc = 25°C
APTM10DHM09TG
= 100V
-
-
-
-
-
-
-
= 9mΩ typ @ Tj = 25°C
Max ratings
Symmetrical design
Lead frames for power connections
Low R
Low input and Miller capacitance
Low gate charge
Avalanche energy rated
Very rugged
3000
100
139
100
430
±30
390
100
10
50
®
DSon
MOSFETs
Unit
mΩ
mJ
W
V
A
V
A
1 – 6

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APTM10DHM09TG Summary of contents

Page 1

... Avalanche current (repetitive and non repetitive Repetitive Avalanche Energy AR E Single Pulse Avalanche Energy AS These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTM10DHM09TG V = 100V DSS R = 9mΩ typ @ Tj = 25°C DSon I = 139A @ Tc = 25°C D ...

Page 2

... Symbol Characteristic V Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr APTM10DHM09TG = 25°C unless otherwise specified j Test Conditions T = 25° 0V,V = 100V 125° 0V,V = 80V j GS ...

Page 3

... Resistance @ 25° 298.15 K 25/  exp B   SP4 Package outline (dimensions in mm) See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com APTM10DHM09TG Transistor Diode To Heatsink R T: Thermistor temperature 25    Thermistor value     − ...

Page 4

... V , Drain to Source Voltage ( Drain Current DS(on) 1.2 Normalized to V =10V @ 69.5A GS 1.1 1 0.9 0 100 I , Drain Current (A) D APTM10DHM09TG Single Pulse 0.001 0.01 0.1 rectangular Pulse Duration (Seconds) 120 V DS 100 250µs pulse test @ < 0.5 duty cycle Drain Current vs Case Temperature ...

Page 5

... T , Case Temperature (°C) C Capacitance vs Drain to Source Voltage 100000 Ciss 10000 Coss Crss 1000 100 Drain to Source Voltage (V) DS APTM10DHM09TG ON resistance vs Temperature 2.5 V =10V 69.5A 2.0 D 1.5 1.0 0.5 0.0 -50 - Junction Temperature (°C) J Maximum Safe Operating Area 1000 limited by ...

Page 6

... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTM10DHM09TG 160 V ...

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