APTM50HM38FG Microsemi Power Products Group, APTM50HM38FG Datasheet

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APTM50HM38FG

Manufacturer Part Number
APTM50HM38FG
Description
MOSFET MODULE FULL BRIDGE SP6
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of APTM50HM38FG

Fet Type
4 N-Channel (H-Bridge)
Fet Feature
Standard
Rds On (max) @ Id, Vgs
45 mOhm @ 45A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
90A
Vgs(th) (max) @ Id
5V @ 5mA
Gate Charge (qg) @ Vgs
246nC @ 10V
Input Capacitance (ciss) @ Vds
11200pF @ 25V
Power - Max
694W
Mounting Type
Chassis Mount
Package / Case
SP6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Absolute maximum ratings
Symbol
R
V
MOSFET Power Module
V
E
E
I
I
P
DSon
I
DM
AR
G1
S1
G2
S2
DSS
AR
AS
D
GS
D
G1
S1
S3
G3
Drain - Source Breakdown Voltage
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
VBUS
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
Full - Bridge
Q1
Q2
0/VBUS
VB US
0/VBUS
Parameter
OUT1
OUT2
Q3
Q4
G3
S3
G4
S4
G2
S2
S4
G4
www.microsemi.com
Application
Features
Benefits
T
T
T
V
R
I
c
c
c
D
= 25°C
= 80°C
= 25°C
DSS
DSon
= 90A @ Tc = 25°C
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Power MOS 7
Kelvin source for easy drive
Very low stray inductance
High level of integration
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Low profile
RoHS Compliant
-
-
-
-
-
-
-
-
= 500V
= 38mΩ typ @ Tj = 25°C
Low R
Low input and Miller capacitance
Low gate charge
Fast intrinsic reverse diode
Avalanche energy rated
Very rugged
Symmetrical design
M5 power connectors
APTM50HM38FG
Max ratings
DSon
2500
500
360
±30
694
90
67
45
46
50
®
FREDFETs
Unit
mΩ
mJ
W
V
A
V
A
1 – 6

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APTM50HM38FG Summary of contents

Page 1

... Avalanche current (repetitive and non repetitive Repetitive Avalanche Energy AR E Single Pulse Avalanche Energy AS These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTM50HM38FG V = 500V DSS R = 38mΩ typ @ Tj = 25°C DSon I = 90A @ Tc = 25°C D Application • ...

Page 2

... 90A 25° 90A T = 125° 333V 25°C di /dt = 200A/µ 125°C j ≤ V ≤ 150° DSS j www.microsemi.com APTM50HM38FG Min Typ Max Unit 200 µA 1000 38 45 mΩ ±150 nA Min Typ Max Unit 11.2 nF 2.4 0.18 246 nC 66 130 1510 µ ...

Page 3

... J T Storage Temperature Range STG T Operating Case Temperature C Torque Mounting torque Wt Package Weight SP6 Package outline (dimensions in mm) See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com APTM50HM38FG Min 2500 -40 -40 -40 To heatsink M6 3 For terminals M5 2 www.microsemi.com Typ ...

Page 4

... Pulse Duration (Seconds) 250 8V 200 7.5V 150 7V 100 6. 5. Drain Current vs Case Temperature 100 V =10V =20V 150 200 25 www.microsemi.com APTM50HM38FG 0 Transfert Characteristics V > I (on)xR (on)MAX 250µs pulse test @ < 0.5 duty cycle T =25° =125° =-55° Gate to Source Voltage (V) GS ...

Page 5

... T , Case Temperature (°C) C Capacitance vs Drain to Source Voltage 100000 Ciss 10000 Coss 1000 Crss 100 Drain to Source Voltage (V) DS APTM50HM38FG ON resistance vs Temperature 2.5 V =10V GS I =45A D 2.0 1.5 1.0 0.5 0.0 -50 - Junction Temperature (°C) J Maximum Safe Operating Area 1000 ...

Page 6

... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTM50HM38FG 120 td(off) ...

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