STP120N4F6 STMicroelectronics, STP120N4F6 Datasheet - Page 10
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STP120N4F6
Manufacturer Part Number
STP120N4F6
Description
MOSFET N-CH 40V 80A TO-220AB
Manufacturer
STMicroelectronics
Series
STripFET™ DeepGATE™r
Datasheet
1.STD120N4F6.pdf
(17 pages)
Specifications of STP120N4F6
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
4.3 mOhm @ 40A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
80A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
65nC @ 10V
Input Capacitance (ciss) @ Vds
3850pF @ 25V
Power - Max
110W
Mounting Type
Through Hole
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-10962-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STP120N4F6
Manufacturer:
SICK
Quantity:
1 000
Part Number:
STP120N4F6
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Package mechanical data
4
10/17
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
specifications, grade definitions and products status are available at: www.st.com.
ECOPACK is an ST trademark.
®
packages, depending on their level of environmental compliance. ECOPACK
Doc ID 17042 Rev 3
STD/B/P120N4F6