STP120N4F6 STMicroelectronics, STP120N4F6 Datasheet - Page 5
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STP120N4F6
Manufacturer Part Number
STP120N4F6
Description
MOSFET N-CH 40V 80A TO-220AB
Manufacturer
STMicroelectronics
Series
STripFET™ DeepGATE™r
Datasheet
1.STD120N4F6.pdf
(17 pages)
Specifications of STP120N4F6
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
4.3 mOhm @ 40A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
80A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
65nC @ 10V
Input Capacitance (ciss) @ Vds
3850pF @ 25V
Power - Max
110W
Mounting Type
Through Hole
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-10962-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STP120N4F6
Manufacturer:
SICK
Quantity:
1 000
Part Number:
STP120N4F6
Manufacturer:
NXP/恩智浦
Quantity:
20 000
STD/B/P120N4F6
Table 7.
Table 8.
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Symbol
Symbol
I
V
SDM
t
t
I
d(on)
d(off)
RRM
I
SD
Q
t
SD
t
t
r
rr
f
rr
(2)
(1)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching on/off (inductive load)
Source drain diode
Parameter
Parameter
Doc ID 17042 Rev 3
V
R
(see Figure 15)
I
I
di/dt = 100 A/µs,
V
(see Figure 17)
SD
SD
DD
G
DD
= 4.7 Ω, V
= 40 A, V
= 80 A,
Test conditions
Test conditions
= 20 V, I
= 30 V
D
GS
GS
= 40 A,
= 0
= 10 V
Electrical characteristics
Min.
Min.
-
-
-
-
-
Typ.
Typ.
20
70
40
20
2.8
40
56
Max.
Max.
320
1.1
80
-
-
Unit
Unit
nC
ns
ns
ns
ns
ns
5/17
A
A
V
A