STP120N4F6 STMicroelectronics, STP120N4F6 Datasheet - Page 12

• Manufacturer Part Number: STP120N4F6
• Description: MOSFET N-CH 40V 80A TO-220AB
• Manufacturer: STMicroelectronics
• Series: STripFET™ DeepGATE™r

Specifications of STP120N4F6

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.3 mOhm @ 40A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 65nC @ 10V
• Input Capacitance (ciss) @ Vds: 3850pF @ 25V
• Power - Max: 110W
• Mounting Type: Through Hole
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10962-5

Package mechanical data
12/17
DIM.
A1
A2
D1
E1
V2
b4
c2
e1
L1
L2
L4
A
D
E
H
R
b
c
e
L
min.
2.20
0.90
0.03
0.64
5.20
0.45
0.48
6.00
6.40
4.40
9.35
0.60
0
1
o
TO-252 (DPAK) mechanical data
Doc ID 17042 Rev 3
mm.
5.10
4.70
2.28
2.80
0.80
0.20
typ
0068772_G
STD/B/P120N4F6
10.10
max.
2.40
1.10
0.23
0.90
5.40
0.60
0.60
6.20
6.60
4.60
8
1
o