STP120N4F6 STMicroelectronics, STP120N4F6 Datasheet - Page 12
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STP120N4F6
Manufacturer Part Number
STP120N4F6
Description
MOSFET N-CH 40V 80A TO-220AB
Manufacturer
STMicroelectronics
Series
STripFET™ DeepGATE™r
Datasheet
1.STD120N4F6.pdf
(17 pages)
Specifications of STP120N4F6
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
4.3 mOhm @ 40A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
80A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
65nC @ 10V
Input Capacitance (ciss) @ Vds
3850pF @ 25V
Power - Max
110W
Mounting Type
Through Hole
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-10962-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STP120N4F6
Manufacturer:
SICK
Quantity:
1 000
Part Number:
STP120N4F6
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Package mechanical data
12/17
DIM.
A1
A2
D1
E1
V2
b4
c2
e1
L1
L2
L4
A
D
E
H
R
b
c
e
L
min.
2.20
0.90
0.03
0.64
5.20
0.45
0.48
6.00
6.40
4.40
9.35
0.60
0
1
o
TO-252 (DPAK) mechanical data
Doc ID 17042 Rev 3
mm.
5.10
4.70
2.28
2.80
0.80
0.20
typ
0068772_G
STD/B/P120N4F6
10.10
max.
2.40
1.10
0.23
0.90
5.40
0.60
0.60
6.20
6.60
4.60
8
1
o