STP120N4F6 STMicroelectronics, STP120N4F6 Datasheet - Page 7

• Manufacturer Part Number: STP120N4F6
• Description: MOSFET N-CH 40V 80A TO-220AB
• Manufacturer: STMicroelectronics
• Series: STripFET™ DeepGATE™r

Specifications of STP120N4F6

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.3 mOhm @ 40A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 65nC @ 10V
• Input Capacitance (ciss) @ Vds: 3850pF @ 25V
• Power - Max: 110W
• Mounting Type: Through Hole
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10962-5

STD/B/P120N4F6
Figure 8.
Figure 10. Normalized gate threshold voltage
Figure 12. Source-drain diode forward
V
GS(th)
(norm)
V
(V)
0.2
1.2
0.8
0.6
(V)
1.0
V
0.4
0.7
0.6
10
0.5
GS
0.8
0.4
0.9
1.0
SD
6
2
8
4
0
-75
0
10
Gate charge vs gate-source voltage Figure 9.
vs temperature
characteristics
T
10
J
20
=25°C
-25
V
20
DD
I
30
D
=80A
=20V
25
30
40
40
50
75
T
50
J
T
60
=-55°C
J
=175°C
125
60
70
70
175
80
Doc ID 17042 Rev 3
AM08636v1
AM08632v1
AM08634v1
Q
T
I
g
SD
J
(nC)
(°C)
(A)
Figure 11. Normalized on resistance vs
(norm)
R
1000
DS(on)
100
(pF)
10
2.0
1.5
1.0
0.5
C
0
-75
0.1
Capacitance variations
temperature
-25
1
V
25
I
GS
D
=40A
Electrical characteristics
=10V
75
10
125
175
V
DS
AM08635v1
AM08633v1
(V)
T
Ciss
Crss
Coss
J
(°C)
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