STP18N55M5 STMicroelectronics, STP18N55M5 Datasheet - Page 20

• Manufacturer Part Number: STP18N55M5
• Description: MOSFET N-CH 25V 14A TO-220AB
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STP18N55M5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 210 mOhm @ 7A, 10V
• Drain To Source Voltage (vdss): 550V
• Current - Continuous Drain (id) @ 25° C: 14A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Power - Max: 90W
• Mounting Type: Through Hole
• Package / Case: *
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 14A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 0.18ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Power: RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Details
• Other names: 497-10963-5

Packaging mechanical data
20/22
Figure 30. Tape for DPAK and D²PAK
Figure 31. Reel for DPAK and D²PAK
For machine ref. only
including draft and
radii concentric around B0
B1
A
T
REEL DIMENSIONS
K0
D
Full radius
B0
Doc ID 17078 Rev 2
STB18N55M5, STD18N55M5, STF18N55M5, STP18N55M5
User direction of feed
A0
B
10 pitches cumulative
tolerance on tape +/- 0.2 mm
User direction of feed
P0
Access hole
At sl ot location
40mm min.
P1
Tape start
Tape slot
In core for
D
D1
C
P2
Bending radius
T
G measured
At hub
F
N
E
AM08851v1
W
AM08852v1
R