STP18N55M5 STMicroelectronics, STP18N55M5 Datasheet - Page 7

• Manufacturer Part Number: STP18N55M5
• Description: MOSFET N-CH 25V 14A TO-220AB
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STP18N55M5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 210 mOhm @ 7A, 10V
• Drain To Source Voltage (vdss): 550V
• Current - Continuous Drain (id) @ 25° C: 14A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Power - Max: 90W
• Mounting Type: Through Hole
• Package / Case: *
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 14A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 0.18ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Power: RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Details
• Other names: 497-10963-5

STB18N55M5, STD18N55M5, STF18N55M5, STP18N55M5
Figure 8.
Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on resistance
Figure 12. Capacitance variations
10000
1000
V
100
(V)
(pF)
(A)
20
10
15
12
10
10
GS
I
C
D
0
6
2
5
8
4
0
1
0
0
0.1
V
DS
V
Output characteristics
GS
5
=10V
10
5
1
V
15
DD
I
D
=6.5A
=440V
20
10
10
25
30
100
15
35
6.5V
7.5V
V
5.5V
V
6V
7V
V
5V
GS
DS
DS
Doc ID 17078 Rev 2
Q
AM08664v1
AM08666v1
AM08668v1
(V)
g
150
(V)
100
450
400
350
250
300
200
50
(nC)
0
Ciss
Coss
Crss
Figure 9.
Figure 13. Output capacitance stored energy
R
DS(on)
0.20
0.18
0.14
0.16
0.10
0.22
0.12
(A)
(Ω)
20
15
10
I
E
(µJ)
D
1.5
1.0
0
4.0
3.0
2.5
2.0
5
3.5
0.5
oss
0
3
0
0
Transfer characteristics
4
2
100
V
V
5
DS
4
GS
200
=20V
=10V
6
Electrical characteristics
6
300
7
8
400
8
10
500
9
12
AM08667v1
AM08669v1
AM08665v1
V
V
I
GS
D
DS
(A)
(V)
(V)
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