STP18N55M5 STMicroelectronics, STP18N55M5 Datasheet - Page 9

• Manufacturer Part Number: STP18N55M5
• Description: MOSFET N-CH 25V 14A TO-220AB
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STP18N55M5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 210 mOhm @ 7A, 10V
• Drain To Source Voltage (vdss): 550V
• Current - Continuous Drain (id) @ 25° C: 14A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Power - Max: 90W
• Mounting Type: Through Hole
• Package / Case: *
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 14A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 0.18ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Power: RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Details
• Other names: 497-10963-5

STB18N55M5, STD18N55M5, STF18N55M5, STP18N55M5
3
Figure 18. Switching times test circuit for
Figure 20. Test circuit for inductive load
Figure 22. Unclamped inductive waveform
25 Ω
P
V
W
DD
G
V
D
S
GS
D.U.T.
A
B
Test circuits
resistive load
switching and diode recovery times
I
D
V
R
D
G
R
G
FAST
DIODE
B
A
I
DM
V
G
A
B
D
R
D.U.T.
L
S
D
L=100μH
V
2200
μF
(BR)DSS
3.3
μF
3.3
μF
Doc ID 17078 Rev 2
1000
μF
AM01472v1
AM01468v1
AM01470v1
V
DD
V
DD
V
DD
Figure 19. Gate charge test circuit
Figure 21. Unclamped inductive load test
Figure 23. Switching time waveform
V
Vgs
Vds
P
Id
i
V
W
i
10%Vds
=20V=V
90%Vds
90%Vgs
P
w
on
on
2200
μF
1kΩ
GMAX
Vgs(I(t))
circuit
I
V
D
))
D
I
G
2.7kΩ
12V
=CONST
Tdelay-off
47kΩ
-off
L
Trise
Trise
D.U.T.
Tcross -over
47kΩ
100Ω
Tfall
Tfall
-
2200
μF
100nF
Concept waveform for Inductive Load Turn-off
Test circuits
3.3
μF
D.U.T.
AM01469v1
AM01471v1
AM05540v1
10%Id
1kΩ
90%Id
V
V
V
9/22
G
DD
DD