STP18N55M5 STMicroelectronics, STP18N55M5 Datasheet - Page 9
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STP18N55M5
Manufacturer Part Number
STP18N55M5
Description
MOSFET N-CH 25V 14A TO-220AB
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheet
1.STD18N55M5.pdf
(22 pages)
Specifications of STP18N55M5
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
210 mOhm @ 7A, 10V
Drain To Source Voltage (vdss)
550V
Current - Continuous Drain (id) @ 25° C
14A
Vgs(th) (max) @ Id
5V @ 250µA
Power - Max
90W
Mounting Type
Through Hole
Package / Case
*
Transistor Polarity
N Channel
Continuous Drain Current Id
14A
Drain Source Voltage Vds
600V
On Resistance Rds(on)
0.18ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Power
RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Details
Other names
497-10963-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
STB18N55M5, STD18N55M5, STF18N55M5, STP18N55M5
3
Figure 18. Switching times test circuit for
Figure 20. Test circuit for inductive load
Figure 22. Unclamped inductive waveform
25 Ω
P
V
W
DD
G
V
D
S
GS
D.U.T.
A
B
Test circuits
resistive load
switching and diode recovery times
I
D
V
R
D
G
R
G
FAST
DIODE
B
A
I
DM
V
G
A
B
D
R
D.U.T.
L
S
D
L=100μH
V
2200
μF
(BR)DSS
3.3
μF
3.3
μF
Doc ID 17078 Rev 2
1000
μF
AM01472v1
AM01468v1
AM01470v1
V
DD
V
DD
V
DD
Figure 19. Gate charge test circuit
Figure 21. Unclamped inductive load test
Figure 23. Switching time waveform
V
Vgs
Vds
P
Id
i
V
W
i
10%Vds
=20V=V
90%Vds
90%Vgs
P
w
on
on
2200
μF
1kΩ
GMAX
Vgs(I(t))
circuit
I
V
D
))
D
I
G
2.7kΩ
12V
=CONST
Tdelay-off
47kΩ
-off
L
Trise
Trise
D.U.T.
Tcross -over
47kΩ
100Ω
Tfall
Tfall
-
2200
μF
100nF
Concept waveform for Inductive Load Turn-off
Test circuits
3.3
μF
D.U.T.
AM01469v1
AM01471v1
AM05540v1
10%Id
1kΩ
90%Id
V
V
V
9/22
G
DD
DD