STP18N55M5 STMicroelectronics, STP18N55M5 Datasheet - Page 8
![no-image](/images/manufacturer_photos/0/6/637/stmicroelectronics_sml.jpg)
STP18N55M5
Manufacturer Part Number
STP18N55M5
Description
MOSFET N-CH 25V 14A TO-220AB
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheet
1.STD18N55M5.pdf
(22 pages)
Specifications of STP18N55M5
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
210 mOhm @ 7A, 10V
Drain To Source Voltage (vdss)
550V
Current - Continuous Drain (id) @ 25° C
14A
Vgs(th) (max) @ Id
5V @ 250µA
Power - Max
90W
Mounting Type
Through Hole
Package / Case
*
Transistor Polarity
N Channel
Continuous Drain Current Id
14A
Drain Source Voltage Vds
600V
On Resistance Rds(on)
0.18ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Power
RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Details
Other names
497-10963-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Electrical characteristics
1. Eon including reverse recovery of a SiC diode
8/22
Figure 14. Normalized gate threshold voltage
Figure 16. Switching losses vs gate resistance
V
GS(th)
1.00
0.90
0.80
(norm)
1.10
0.70
(μJ)
120
100
140
80
60
40
20
-50
E
0
0
vs temperature
(1)
-25
V
V
I
D
CL
GS
=9A
=400V
=10V
10
0
25
20
50
I
D
=250µA
75
30
100
Eon
40
T
Eoff
J
(°C)
Doc ID 17078 Rev 2
STB18N55M5, STD18N55M5, STF18N55M5, STP18N55M5
AM08670v1
AM08673v1
R
G
(Ω)
Figure 15. Normalized on resistance vs
Figure 17. Normalized B
R
BV
DS(on)
(norm)
(norm)
0.93
1.07
1.03
0.99
0.97
0.95
1.05
1.01
DSS
2.1
1.9
1.5
1.3
1.1
0.7
1.7
0.9
0.5
-50
-50
temperature
-25
-25
0
0
V
I
D
I
GS
D
=6.5A
25
=1mA
=10V
25
50
VDSS
50
75
75
vs temperature
100
100
T
T
J
J
(°C)
(°C)
AM08671v1
AM08672v1