STP18N55M5 STMicroelectronics, STP18N55M5 Datasheet - Page 8

• Manufacturer Part Number: STP18N55M5
• Description: MOSFET N-CH 25V 14A TO-220AB
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STP18N55M5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 210 mOhm @ 7A, 10V
• Drain To Source Voltage (vdss): 550V
• Current - Continuous Drain (id) @ 25° C: 14A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Power - Max: 90W
• Mounting Type: Through Hole
• Package / Case: *
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 14A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 0.18ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Power: RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Details
• Other names: 497-10963-5

Electrical characteristics
1. Eon including reverse recovery of a SiC diode
8/22
Figure 14. Normalized gate threshold voltage
Figure 16. Switching losses vs gate resistance
V
GS(th)
1.00
0.90
0.80
(norm)
1.10
0.70
(μJ)
120
100
140
80
60
40
20
-50
E
0
0
vs temperature
(1)
-25
V
V
I
D
CL
GS
=9A
=400V
=10V
10
0
25
20
50
I
D
=250µA
75
30
100
Eon
40
T
Eoff
J
(°C)
Doc ID 17078 Rev 2
STB18N55M5, STD18N55M5, STF18N55M5, STP18N55M5
AM08670v1
AM08673v1
R
G
(Ω)
Figure 15. Normalized on resistance vs
Figure 17. Normalized B
R
BV
DS(on)
(norm)
(norm)
0.93
1.07
1.03
0.99
0.97
0.95
1.05
1.01
DSS
2.1
1.9
1.5
1.3
1.1
0.7
1.7
0.9
0.5
-50
-50
temperature
-25
-25
0
0
V
I
D
I
GS
D
=6.5A
25
=1mA
=10V
25
50
VDSS
50
75
75
vs temperature
100
100
T
T
J
J
(°C)
(°C)
AM08671v1
AM08672v1