BF1101,215 NXP Semiconductors, BF1101,215 Datasheet - Page 3

• Manufacturer Part Number: BF1101,215
• Description: MOSFET N-CH 7V 30MA SOT343R
• Manufacturer: NXP Semiconductors

Specifications of BF1101,215

• Package / Case: SOT-143, SOT-143B, TO-253AA
• Current Rating: 30mA
• Frequency: 800MHz
• Transistor Type: N-Channel Dual Gate
• Noise Figure: 1.7dB
• Current - Test: 12mA
• Voltage - Test: 5V
• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Drain-source Breakdown Voltage: 16 V
• Continuous Drain Current: 30 mA
• Power Dissipation: 200 mW
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. T
THERMAL CHARACTERISTICS
1999 May 14
V
I
I
I
P
T
T
R
handbook, halfpage
SYMBOL
SYMBOL
D
G1
G2
stg
j
DS
tot
N-channel dual-gate MOS-FETs
th j-s
(mW)
P tot
s
250
200
150
100
is the temperature of the soldering point of the source lead.
50
0
0
drain-source voltage
drain current
gate 1 current
gate 2 current
total power dissipation
storage temperature
operating junction temperature
thermal resistance from junction to soldering point
Fig.4 Power derating curve.
50
PARAMETER
100
150
T s (°C)
PARAMETER
MGL615
200
T
s
 110 C; note 1
3
CONDITIONS
BF1101; BF1101R; BF1101WR





65

MIN.
VALUE
200
7
30
10
10
200
+150
+150
Product specification
MAX.
UNIT
K/W
V
mA
mA
mA
mW
C
C
UNIT