BF1101,215 NXP Semiconductors, BF1101,215 Datasheet - Page 4

• Manufacturer Part Number: BF1101,215
• Description: MOSFET N-CH 7V 30MA SOT343R
• Manufacturer: NXP Semiconductors

Specifications of BF1101,215

• Package / Case: SOT-143, SOT-143B, TO-253AA
• Current Rating: 30mA
• Frequency: 800MHz
• Transistor Type: N-Channel Dual Gate
• Noise Figure: 1.7dB
• Current - Test: 12mA
• Voltage - Test: 5V
• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Drain-source Breakdown Voltage: 16 V
• Continuous Drain Current: 30 mA
• Power Dissipation: 200 mW
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

NXP Semiconductors
STATIC CHARACTERISTICS
T
Note
1. R
DYNAMIC CHARACTERISTICS
Common source; T
Note
1. Measured in test circuit of Fig.21.
1999 May 14
V
V
V
V
V
V
V
I
I
I
y
C
C
C
C
F
X
SYMBOL
SYMBOL
j
DSX
G1-SS
G2-SS
= 25 C unless otherwise specified.
(BR)DSS
(BR)G1-SS
(BR)G2-SS
(F)S-G1
(F)S-G2
G1-S (th)
G2-S (th)
mod
N-channel dual-gate MOS-FETs
ig1-ss
ig2-ss
oss
rss
fs

G1
connects G
drain-source breakdown voltage
gate 1-source breakdown voltage
gate 2-source breakdown voltage
forward source-gate 1 voltage
forward source-gate 2 voltage
gate 1-source threshold voltage
gate 2-source threshold voltage
drain-source current
gate 1 cut-off current
gate 2 cut-off current
forward transfer admittance
input capacitance at gate 1
input capacitance at gate 2
output capacitance
reverse transfer capacitance f = 1 MHz
noise figure
cross-modulation
amb
1
PARAMETER
to V
= 25 C; V
PARAMETER
GG
= 5 V; see Fig.21.
G2-S
= 4 V; V
pulsed; T
f = 1 MHz
f = 1 MHz
f = 1 MHz
f = 800 MHz; Y
input level for k = 1% at 0 dB AGC;
f
input level for k = 1% at 40 dB AGC;
f
w
w
= 50 MHz; f
= 50 MHz; f
DS
= 5 V; I
V
V
V
V
V
V
V
V
note 1
V
V
j
G1-S
G2-S
G1-S
G2-S
G1-S
G2-S
G1-S
G2-S
G2-S
G1-S
= 25 C
D
CONDITIONS
unw
unw
= V
= V
= V
= V
= V
= 4 V; V
= 5 V; V
= 4 V; V
= V
= V
S
= 12 mA; unless otherwise specified.
4
= Y
G2-S
DS
DS
DS
DS
DS
DS
= 60 MHz; note 1
= 60 MHz; note 1
S opt
= 0; I
= 0; I
= 0; I
= 0; I
= 0; V
= 0; V
CONDITIONS
= 0; I
DS
DS
DS
= 5 V; I
= 5 V; I
= 5 V; R
S-G1
S-G2
G1-S
G2-S
BF1101; BF1101R; BF1101WR
G1-S
G2-S
D
= 10 A
= 10 mA
= 10 mA
= 10 mA
= 10 mA
= 5 V
= 4 V
D
D
G1
= 100 A
= 100 A
= 120 k;
25





85
100
MIN.
7
7
7
0.5
0.5
0.3
0.3
8


30
2.2
1.6
1.2
25
1.7


TYP.
MIN.
Product specification

16
16
1.5
1.5
1.0
1.2
16
50
20
40
2.7


35
2.5


MAX.
MAX.
V
V
V
V
V
V
V
mA
nA
nA
mS
pF
pF
pF
fF
dB
dBV
dBV
UNIT
UNIT