BF1101,215 NXP Semiconductors, BF1101,215 Datasheet - Page 5

• Manufacturer Part Number: BF1101,215
• Description: MOSFET N-CH 7V 30MA SOT343R
• Manufacturer: NXP Semiconductors

Specifications of BF1101,215

• Package / Case: SOT-143, SOT-143B, TO-253AA
• Current Rating: 30mA
• Frequency: 800MHz
• Transistor Type: N-Channel Dual Gate
• Noise Figure: 1.7dB
• Current - Test: 12mA
• Voltage - Test: 5V
• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Drain-source Breakdown Voltage: 16 V
• Continuous Drain Current: 30 mA
• Power Dissipation: 200 mW
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

NXP Semiconductors
1999 May 14
handbook, halfpage
handbook, halfpage
N-channel dual-gate MOS-FETs
V
T
V
T
DS
j
DS
j
= 25 C.
= 25 C.
(mA)
(μA)
I G1
I D
= 5 V.
Fig.5 Transfer characteristics; typical values.
= 5 V.
100
Fig.7
80
60
40
20
20
16
12
0
8
4
0
0
0
Gate 1 current as a function of gate 1
voltage; typical values.
0.5
0.4
0.8
1
V G2-S = 4 V
1.5
1.2
V G2-S = 4 V
3.5 V
V G1-S (V)
V G1-S (V)
1.6
3.5 V
2
3 V
2.5 V
2 V
MGS301
MGS299
1.5 V
2.5 V
3 V
1 V
2 V
2.5
2
5
handbook, halfpage
handbook, halfpage
V
T
V
T
j
G2-S
(mS)
DS
j
= 25 C.
(mA)
= 25 C.
y fs
Fig.8
I D
= 5 V.
Fig.6 Output characteristics; typical values.
40
30
20
10
20
16
12
= 4 V.
0
8
4
0
BF1101; BF1101R; BF1101WR
0
0
Forward transfer admittance as a
function of drain current; typical values.
4
2
8
V G1-S = 1.6 V
4
1.5 V
1.4 V
1.2 V
1.1 V
1.3 V
12
1 V
Product specification
V G2-S = 4 V
6
16
V DS (V)
2 V
2.5 V
I D (mA)
MGS302
MGS300
3.5 V
3 V
20
8