H11A1M Fairchild Semiconductor, H11A1M Datasheet - Page 9
H11A1M
Manufacturer Part Number
H11A1M
Description
Transistor Output Optocouplers Optocoupler Phototransistor
Manufacturer
Fairchild Semiconductor
Specifications of H11A1M
Maximum Input Diode Current
60 mA
Maximum Reverse Diode Voltage
6 V
Output Device
Transistor With Base
Output Type
DC
Configuration
1
Input Type
DC
Maximum Collector Emitter Voltage
30 V
Maximum Collector Emitter Saturation Voltage
400 mV
Isolation Voltage
5250 Vrms
Maximum Forward Diode Voltage
1.5 V
Maximum Power Dissipation
250 mW
Maximum Operating Temperature
+ 100 C
Minimum Operating Temperature
- 55 C
Package / Case
PDIP White
Number Of Elements
1
Reverse Breakdown Voltage
6V
Forward Voltage
1.5V
Forward Current
60mA
Collector-emitter Voltage
30V
Package Type
PDIP
Power Dissipation
250mW
Collector-emitter Saturation Voltage
0.4V
Pin Count
6
Mounting
Through Hole
Operating Temp Range
-55C to 100C
Operating Temperature Classification
Industrial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
©2005 Fairchild Semiconductor Corporation
4NXXM, H11AXM Rev. 1.0.3
Carrier Tape Specification
Reflow Profile
C
21.0
4.5
300
280
260
240
220
200
180
160
140
120
100
80
60
40
20
0
0
0.1 MAX
0.20
0.1
0.30
User Direction of Feed
0.05
60
33 Sec
1.822 C/Sec Ramp up rate
4.0
10.1
0.1
120
0.20
2.0
Time (s)
12.0
9
0.05
0.1
180
183 C = 90 Sec
260 C
Time above
270
9.1
Ø1.5 MIN
Ø1.5
>245 C = 42 Sec
0.20
11.5
1.75
360
0.1/-0
1.0
24.0
0.10
0.3
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