FP40R12KE3 Infineon Technologies, FP40R12KE3 Datasheet - Page 2

IGBT Modules 1200V 40A PIM

FP40R12KE3

Manufacturer Part Number
FP40R12KE3
Description
IGBT Modules 1200V 40A PIM
Manufacturer
Infineon Technologies
Datasheets

Specifications of FP40R12KE3

Configuration
Hex
Collector- Emitter Voltage Vceo Max
1200 V
Collector-emitter Saturation Voltage
2.3 V
Continuous Collector Current At 25 C
55 A
Gate-emitter Leakage Current
400 nA
Power Dissipation
200 W
Maximum Operating Temperature
+ 125 C
Maximum Gate Emitter Voltage
+/- 20 V
Minimum Operating Temperature
- 40 C
Mounting Style
Screw
Package / Case
EconoPIM2
Module Configuration
Seven
Transistor Polarity
N Channel
Dc Collector Current
55A
Collector Emitter Voltage Vces
2.3V
Power Dissipation Pd
200W
Collector Emitter Voltage V(br)ceo
1.2kV
Rohs Compliant
Yes
Packages
AG-ECONO2-1
Ic (max)
40.0 A
Vce(sat) (typ)
1.8 V
Technology
IGBT3
Housing
EconoPIM™ 2
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FP40R12KE3
Manufacturer:
FUJI
Quantity:
165
Part Number:
FP40R12KE3
Quantity:
112
Part Number:
FP40R12KE3G
Manufacturer:
INFINEON
Quantity:
210
Part Number:
FP40R12KE3G
Manufacturer:
SEMIKRON
Quantity:
726
Part Number:
FP40R12KE3G
Quantity:
113
Modul Isolation/ Module Isolation
Isolations-Prüfspannung
insulation test voltage
Diode Gleichrichter/ Diode Rectifier
Durchlaßspannung
forward voltage
Schleusenspannung
threshold voltage
Ersatzwiderstand
slope resistance
Sperrstrom
reverse current
Modul Leitungswiderstand, Anschlüsse-Chip
lead resistance, terminals-chip
Transistor Wechselrichter/ Transistor Inverter
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
Gate-Schwellenspannung
gate threshold voltage
Eingangskapazität
input capacitance
Kollektor-Emitter Reststrom
collector-emitter cut off current
Gate-Emitter Reststrom
gate-emitter leakage current
Einschaltverzögerungszeit (ind. Last)
turn on delay time (inductive load)
Anstiegszeit (induktive Last)
rise time (inductive load)
Abschaltverzögerungszeit (ind. Last)
turn off delay time (inductive load)
Fallzeit (induktive Last)
fall time (inductive load)
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
Kurzschlußverhalten
SC Data
IGBT-Module
IGBT-Modules
Elektrische Eigenschaften / Electrical properties
Charakteristische Werte / Characteristic values
Technische Information / Technical Information
RMS, f = 50 Hz, t = 1 min.
NTC connected to Baseplate
T
T
T
T
T
V
V
V
f = 1MHz, T
V
V
V
I
V
V
I
V
V
I
V
V
I
V
V
I
V
I
V
t
T
FP40R12KE3
C
C
C
C
C
C
P
vj
vj
vj
vj
C
vj
GE
GE
CE
CE
GE
CE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
= I
= I
= I
= I
= I
= I
= 150°C,
= 150°C
= 150°C
= 150°C,
= 25°C
125°C,
= 15V, T
= 15V, T
= V
= 25 V, V
= 0V,
= 0V, V
= ±15V, T
= ±15V, T
= ±15V, T
= ±15V, T
= ±15V, T
= ±15V, T
= ±15V, T
= ±15V, T
= ±15V, T
= ±15V, T
10µs, V
Nenn
Nenn
Nenn
Nenn
Nenn
Nenn
GE
,
,
,
,
,
,
,
GE
vj
T
T
GE
= 25°C
GE
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
=20V, T
= 25°C, V
= 25°C,
= 125°C,
= 25°C, R
= 125°C, R
= 25°C, R
= 125°C, R
= 25°C, R
= 125°C, R
= 25°C, R
= 125°C, R
= 125°C, R
= 125°C, R
= 25°C,
2(11)
= 0 V
15V,
vj
=25°C
V
V
V
V
V
V
V
R
L =
L =
CC
CE
CC
CC
CC
CC
CC
CC
I
I
G
I
V
G
G
G
G
G
G
G
G
G
G
C
C
C
I
=
F
=
R
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
= 40 A
= 1600 V
40 A
40 A
1,5 mA
1200 V
600 V
27 Ohm
27 Ohm
600 V
27 Ohm
27 Ohm
600 V
27 Ohm
27 Ohm
600 V
27 Ohm
27 Ohm
600 V
27 Ohm
45 nH
600 V
27 Ohm
45 nH
27 Ohm
720 V
R
V
V
V
V
AA'+CC'
GE(TO)
C
I
I
t
t
E
E
CE sat
V
CES
GES
I
d,on
d,off
ISOL
I
(TO)
r
SC
t
t
R
ies
T
on
off
r
f
F
min.
min.
5,0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
typ.
typ.
2,15
420
520
160
2,5
1,2
1,8
5,8
2,5
5,8
4,9
85
90
30
45
65
90
2
5
-
-
-
-
DB-PIM-IGBT3_2Serie.xls
max.
max.
10,5
400
0,8
2,3
6,5
5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
mWs
mWs
m
m
mA
mA
kV
nF
nA
ns
ns
ns
ns
ns
ns
ns
ns
V
V
V
V
V
A

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