BLF369,112 NXP Semiconductors, BLF369,112 Datasheet - Page 2
BLF369,112
Manufacturer Part Number
BLF369,112
Description
RF MOSFET Small Signal RF LDMOS 65V 100A
Manufacturer
NXP Semiconductors
Datasheet
1.BLF369112.pdf
(17 pages)
Specifications of BLF369,112
Configuration
Dual Dual Source
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
13 V
Maximum Operating Temperature
+ 200 C
Minimum Operating Temperature
- 65 C
Mounting Style
Screw
Resistance Drain-source Rds (on)
0.04 Ohm (Typ) @ 14.5 V
Transistor Polarity
N-Channel
Package / Case
LDMOST
Application
HF/VHF/UHF
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
65V
Output Power (max)
500W
Power Gain (typ)@vds
18@32V/19@32V/19@32VdB
Frequency (max)
500MHz
Package Type
LDMOST
Pin Count
5
Forward Transconductance (typ)
15S
Drain Source Resistance (max)
40(Typ)@14.5Vmohm
Input Capacitance (typ)@vds
400@32VpF
Output Capacitance (typ)@vds
230@32VpF
Reverse Capacitance (typ)
15@32VpF
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
60%
Mounting
Screw
Mode Of Operation
2-Tone Class-AB/CW Class-AB/Pulsed RF Class-AB
Number Of Elements
2
Vswr (max)
10
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934059725112 BLF369
NXP Semiconductors
2. Pinning information
3. Ordering information
4. Limiting values
BLF369_4
Product data sheet
1.3 Applications
I
I
I
Table 2.
[1]
Table 3.
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Pin
1
2
3
4
5
Type number
BLF369
Symbol
V
V
T
T
stg
j
DS
GS
Pulsed applications up to 500 MHz
Communication transmitter applications in the HF/VHF/UHF band under specific
conditions
Industrial applications up to 500 MHz under special conditions
Connected to flange.
Pinning
Ordering information
Limiting values
Parameter
drain-source voltage
gate-source voltage
storage temperature
junction temperature
Description
drain1
drain2
gate1
gate2
source
Package
Name
-
Rev. 04 — 19 February 2009
Description
flanged LDMOST ceramic package; 2 mounting holes;
4 leads
[1]
Simplified outline
Conditions
Multi-use VHF power LDMOS transistor
1
3
2
4
5
Min
-
-
0.5
65
Graphic symbol
© NXP B.V. 2009. All rights reserved.
BLF369
3
4
Max
65
+13
+150
200
Version
SOT800-2
1
2
sym117
Unit
V
V
C
C
5
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