BLF369,112 NXP Semiconductors, BLF369,112 Datasheet - Page 9

• Manufacturer Part Number: BLF369,112
• Description: RF MOSFET Small Signal RF LDMOS 65V 100A
• Manufacturer: NXP Semiconductors

Specifications of BLF369,112

• Configuration: Dual Dual Source
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Maximum Operating Temperature: + 200 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: Screw
• Resistance Drain-source Rds (on): 0.04 Ohm (Typ) @ 14.5 V
• Transistor Polarity: N-Channel
• Package / Case: LDMOST
• Application: HF/VHF/UHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 500W
• Power Gain (typ)@vds: 18@32V/19@32V/19@32VdB
• Frequency (max): 500MHz
• Package Type: LDMOST
• Pin Count: 5
• Forward Transconductance (typ): 15S
• Drain Source Resistance (max): 40(Typ)@14.5Vmohm
• Input Capacitance (typ)@vds: 400@32VpF
• Output Capacitance (typ)@vds: 230@32VpF
• Reverse Capacitance (typ): 15@32VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 60%
• Mounting: Screw
• Mode Of Operation: 2-Tone Class-AB/CW Class-AB/Pulsed RF Class-AB
• Number Of Elements: 2
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934059725112 BLF369

NXP Semiconductors
8. Test information
Table 8.
For test circuit, see
BLF369_4
Product data sheet
Component
B1
B2
C1
C2, C3
C4, C7
C5, C8
C6, C9
C10, C11, C13, C14
C12, C15
Fig 13. BLF369 electromigration (I
Years
(10) T
(11) T
(1) T
(2) T
(3) T
(4) T
(5) T
(6) T
(7) T
(8) T
(9) T
10
10
10
10
10
10
1
6
5
4
3
2
0
TTF (0.1 % failure fraction); best estimate values.
The reliability at pulsed conditions can be calculated as follows: TTF (0.1 %)
j
j
j
j
j
j
j
j
j
j
j
List of components
= 100 C
= 110 C
= 120 C
= 130 C
= 140 C
= 150 C
= 160 C
= 170 C
= 180 C
= 190 C
= 200 C
7.6 Reliability
Figure
Description
semi rigid coax
semi rigid coax
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
ceramic capacitor
electrolytic capacitor
multilayer ceramic chip capacitor
ceramic capacitor
14,
Figure 15
(7)
6
(1)
(8)
D
, total device)
and
(2)
(9)
Figure
(3)
(10)
Rev. 04 — 19 February 2009
12
16.
(4)
(11)
(5)
Value
25 ; 120 mm
25 ; 56 mm
91 pF
56 pF
100 pF
15 nF
220 F
220 pF
15 nF
(6)
18
Multi-use VHF power LDMOS transistor
1 / .
[1]
[1]
[1]
[1]
[1]
Remarks
EZ90-25-TP
EZ90-25-TP
24
I
dc
(A)
© NXP B.V. 2009. All rights reserved.
001aae504
BLF369
30
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