PSMN045-80YS,115 NXP Semiconductors, PSMN045-80YS,115 Datasheet - Page 4
![MOSFET N-CH LFPAK](/photos/5/48/54859/568-lfpak-4_sot669_sml.jpg)
PSMN045-80YS,115
Manufacturer Part Number
PSMN045-80YS,115
Description
MOSFET N-CH LFPAK
Manufacturer
NXP Semiconductors
Datasheet
1.PSMN045-80YS115.pdf
(15 pages)
Specifications of PSMN045-80YS,115
Input Capacitance (ciss) @ Vds
675pF @ 40V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
45 mOhm @ 5A, 10V
Drain To Source Voltage (vdss)
80V
Current - Continuous Drain (id) @ 25° C
24A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
12.5nC @ 10V
Power - Max
56W
Mounting Type
Surface Mount
Package / Case
SC-100, SOT-669
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
45 mOhms
Drain-source Breakdown Voltage
80 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
17 A, 24 A
Power Dissipation
56 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
568-5587-2
NXP Semiconductors
PSMN045-80YS
Product data sheet
Fig 3.
10
10
10
(A)
10
I
D
10
-1
-2
3
2
1
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
1
Limit R
DSon
= V
DS
/ I
D
All information provided in this document is subject to legal disclaimers.
10
Rev. 02 — 25 October 2010
DC
N-channel LFPAK 80 V 45 mΩ standard level MOSFET
10
2
100 μs
1 ms
10 ms
100 ms
10 μs
PSMN045-80YS
V
DS
(V)
© NXP B.V. 2010. All rights reserved.
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