PSMN045-80YS,115 NXP Semiconductors, PSMN045-80YS,115 Datasheet - Page 9

• Manufacturer Part Number: PSMN045-80YS,115
• Description: MOSFET N-CH LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN045-80YS,115

• Input Capacitance (ciss) @ Vds: 675pF @ 40V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 45 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 80V
• Current - Continuous Drain (id) @ 25° C: 24A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 12.5nC @ 10V
• Power - Max: 56W
• Mounting Type: Surface Mount
• Package / Case: SC-100, SOT-669
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 45 mOhms
• Drain-source Breakdown Voltage: 80 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 17 A, 24 A
• Power Dissipation: 56 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5587-2

NXP Semiconductors
PSMN045-80YS
Product data sheet
Fig 13. Normalized drain-source on-state resistance
Fig 15. Gate-source voltage as a function of gate
V
(V)
GS
2.5
2.0
1.5
1.0
0.5
0.0
a
10
8
6
4
2
0
-60
factor as a function of junction temperature
charge; typical values
0
-30
0
16V
V
DS
5
30
= 40V
60
90
10
120
Q
All information provided in this document is subject to legal disclaimers.
G
003aad045
003aad370
(nC)
150
64V
T
j
(°C)
Rev. 02 — 25 October 2010
180
15
N-channel LFPAK 80 V 45 mΩ standard level MOSFET
Fig 14. Gate charge waveform definitions
Fig 16. Source (diode forward) current as a function of
100
(A)
80
60
40
20
I
S
0
source-drain (diode forward) voltage; typical
values
0
V
V
V
V
GS(pl)
DS
GS(th)
GS
Q
GS1
0.5
I
Q
D
PSMN045-80YS
GS
175 °C
Q
GS2
Q
G(tot)
Q
GD
1
T
j
© NXP B.V. 2010. All rights reserved.
V
= 25 °C
SD
003aaa508
003aad049
(V)
1.5
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